LEADER 04270nam  22006735  450 
001 9910792491703321
005 20200705011354.0
010   $a3-642-97593-3
024 7 $a10.1007/978-3-642-97593-6
035   $a(CKB)2660000000027942
035   $a(SSID)ssj0000932110
035   $a(PQKBManifestationID)11565285
035   $a(PQKBTitleCode)TC0000932110
035   $a(PQKBWorkID)10884733
035   $a(PQKB)11298651
035   $a(DE-He213)978-3-642-97593-6
035   $a(MiAaPQ)EBC3098640
035   $a(PPN)237948281
035   $a(EXLCZ)992660000000027942
100   $a20120117d1995      u|             0
101 0 $aeng
135   $aurnn|008mamaa
181   $ctxt
182   $cc
183   $acr
200 10$aMetal Impurities in Silicon-Device Fabrication$b[electronic resource] /$fby Klaus Graff
205   $a1st ed. 1995.
210  1$aBerlin, Heidelberg :$cSpringer Berlin Heidelberg :$cImprint: Springer,$d1995.
215   $a1 online resource (IX, 216 p.) 
225 1 $aSpringer Series in Materials Science,$x0933-033X ;$v24
300   $aBibliographic Level Mode of Issuance: Monograph
311   $a3-540-58317-3 
311   $a3-642-97595-X 
320   $aIncludes bibliographical references and index.
327   $a1. Introduction -- 2. Common Properties of Transition Metals -- 2.1 General Behavior -- 2.2 Contamination of Silicon Wafers -- 2.3 Impact on Device Performance -- 3. Properties of Transition Metals in Silicon -- 3.1 Solubilities -- 3.2 Diffusivities -- 3.3 Dissolved Impurities -- 3.4 Precipitated Metals -- 4. Properties of the Main Impurities -- 4.1 Iron -- 4.2 Nickel -- 4.3 Copper -- 4.4 Molybdenum -- 4.5 Palladium -- 4.6 Platinum -- 4.7 Gold -- 5. Properties of Rare Impurities -- 5.1 Scandium -- 5.2 Titanium -- 5.3 Vanadium -- 5.4 Chromium -- 5.5 Manganese -- 5.6 Cobalt -- 5.7 Zinc -- 5.8 Rhodium -- 5.9 Silver -- 5.10 Tantalum -- 5.11 Tungsten -- 5.12 Mercury -- 6. Detection Methods -- 6.1 Detection of Total Impurity Content -- 6.2 Detection of Dissolved Impurities -- 6.3 Detection of Precipitates -- 7. Requirements of Modern Technology -- 7.1 Reduction of Contamination -- 8. Gettering of Impurities -- 8.1 Gettering Mechanisms -- 8.2 Control of Gettering Efficiency -- 9. Conclusion and Future Trends -- References.
330   $aMetal Impurities in Silicon-Device Fabrication treats the transition-metal impurities generated during silicon sample and device fabrication. The different mechanisms responsible for contamination are discussed, and a survey given of their impact on device performance. The specific properties of main and rare impurities in silicon are examined, as well as the detection methods and requirements in modern technology. Finally, impurity gettering is studied along with modern techniques to determine gettering efficiency. In all of these subjects, reliable and up-to-date data are presented. The monograph provides a thorough review of the results of recent scientific investigations, as well as of the relevant data and properties of the various metal impurities in silicon.
410  0$aSpringer Series in Materials Science,$x0933-033X ;$v24
606   $aMaterials?Surfaces
606   $aThin films
606   $aElectronics
606   $aMicroelectronics
606   $aInorganic chemistry
606   $aSurfaces and Interfaces, Thin Films$3https://scigraph.springernature.com/ontologies/product-market-codes/Z19000
606   $aElectronics and Microelectronics, Instrumentation$3https://scigraph.springernature.com/ontologies/product-market-codes/T24027
606   $aInorganic Chemistry$3https://scigraph.springernature.com/ontologies/product-market-codes/C16008
615  0$aMaterials?Surfaces.
615  0$aThin films.
615  0$aElectronics.
615  0$aMicroelectronics.
615  0$aInorganic chemistry.
615 14$aSurfaces and Interfaces, Thin Films.
615 24$aElectronics and Microelectronics, Instrumentation.
615 24$aInorganic Chemistry.
676   $a620.44
700   $aGraff$b Klaus$4aut$4http://id.loc.gov/vocabulary/relators/aut$01483630
906   $aBOOK
912   $a9910792491703321
996   $aMetal Impurities in Silicon-Device Fabrication$93701833
997   $aUNINA