LEADER 01907oam 2200505 450 001 9910716960903321 005 20211110111255.0 035 $a(CKB)5470000002526586 035 $a(OCoLC)1284803904 035 $a(EXLCZ)995470000002526586 100 $a20211108d2010 ua 0 101 0 $aeng 135 $aur||||||||||| 181 $ctxt$2rdacontent 182 $cc$2rdamedia 183 $acr$2rdacarrier 200 10$aOccurrence and sources of Escherichia coli in metropolitan St. Louis streams, October 2004 through September 2007 /$fby Donald H. Wilkison and Jerri V. Davis ; prepared in cooperation with the Metropolitan St. Louis Sewer District 210 1$aReston, Virginia :$cU.S. Department of the Interior, U.S. Geological Survey,$d2010. 215 $a1 online resource (v, 57 pages) $ccolor illustrations, color maps 225 1 $aScientific investigations report ;$v2010-5150 320 $aIncludes bibliographical references (pages 47-51). 606 $aEscherichia coli$zMissouri$zSaint Louis 606 $aWater quality$zMissouri$zSaint Louis 606 $aUrban runoff$zMissouri$zSaint Louis 606 $aEscherichia coli$2fast 606 $aUrban runoff$2fast 606 $aWater quality$2fast 607 $aMissouri$zSaint Louis$2fast 615 0$aEscherichia coli 615 0$aWater quality 615 0$aUrban runoff 615 7$aEscherichia coli. 615 7$aUrban runoff. 615 7$aWater quality. 700 $aWilkison$b Donald H.$01383005 702 $aDavis$b Jerri V. 712 02$aGeological Survey (U.S.), 712 02$aMetropolitan St. Louis Sewer District (Mo.) 801 0$bGPO 801 1$bGPO 801 2$bGPO 906 $aBOOK 912 $a9910716960903321 996 $aOccurrence and sources of Escherichia coli in metropolitan St. Louis streams, October 2004 through September 2007$93493627 997 $aUNINA LEADER 05560nam 2200661Ia 450 001 9910792056403321 005 20200520144314.0 010 $a1-299-28104-4 010 $a981-4390-05-4 035 $a(CKB)2560000000099514 035 $a(EBL)1143290 035 $a(OCoLC)830161979 035 $a(SSID)ssj0000950758 035 $a(PQKBManifestationID)12361615 035 $a(PQKBTitleCode)TC0000950758 035 $a(PQKBWorkID)10879885 035 $a(PQKB)11599657 035 $a(MiAaPQ)EBC1143290 035 $a(WSP)00002907 035 $a(Au-PeEL)EBL1143290 035 $a(CaPaEBR)ebr10674363 035 $a(CaONFJC)MIL459354 035 $a(EXLCZ)992560000000099514 100 $a20120107d2012 uy 0 101 0 $aeng 135 $aurcn||||||||| 181 $ctxt 182 $cc 183 $acr 200 10$aSilicon solid state devices and radiation detection$b[electronic resource] /$fClaude Leroy, Pier-Giorgio Rancoita 210 $aSingapore ;$aHackensack, N. J. $cWorld Scientific Publishing Co. Pte Ltd$dc2012 215 $a1 online resource (430 p.) 300 $aDescription based upon print version of record. 311 $a981-4390-04-6 320 $aIncludes bibliographical reference (p. 373-400) and index. 327 $aContents; Preface; 1. Interactions of Charged Particles and Photons; 1.1 Passage of Massive Charged Particles Through Matter; 1.1.1 Collision-Loss Processes of Massive Charged Particles; 1.1.1.1 Maximum Transferable Energy to Atomic Electrons; 1.1.1.2 Bragg Curve and Peak; 1.1.1.3 Energy-Loss Minimum, Density Effect and Relativistic Rise; 1.1.1.4 Restricted Energy-Loss and Fermi Plateau; 1.1.1.5 Energy-Loss Fluctuations and the Most Probable Energy-Loss; 1.1.1.6 Improved Energy-Loss Distribution and Effective Most Probable Energy-Loss; 1.1.1.7 Nuclear Energy-Loss of Massive Particles 327 $a1.2 Collision and Radiation Energy-Losses of Electrons and Positrons 1.2.1 Collision Losses and the Most Probable Energy-Loss; 1.2.2 Radiation Energy-Losses; 1.3 Nuclear and Non-Ionizing Energy Losses of Electrons; 1.3.1 Scattering Cross Section of Electrons on Nuclei; 1.3.1.1 Interpolated Expression for RMott; 1.3.1.2 Screened Coulomb Potentials; 1.3.1.3 Finite Nuclear Size; 1.3.1.4 Finite Rest Mass of Target Nucleus; 1.3.2 Nuclear Stopping Power of Electrons; 1.3.3 Non-Ionizing Energy-Loss of Electrons; 1.4 Interactions of Photons with Matter; 1.4.1 Photoelectric Effect; 1.4.2 Compton Effect 327 $a1.4.3 Pair Production 1.4.3.1 Pair Production in Nuclear and Atomic Electron Fields; 1.4.4 Absorption of Photons in Silicon; 2. Physics and Properties of Silicon Semiconductor; 2.1 Structure and Growth of Silicon Crystals; 2.1.1 Imperfections and Defects in Crystals; 2.2 Energy Band Structure and Energy Gap; 2.2.1 Energy Gap Dependence on Temperature and Pressure in Silicon; 2.2.2 Effective Mass; 2.2.2.1 Conductivity and Density-of-States Effective Masses in Silicon; 2.3 Carrier Concentration and Fermi Level; 2.3.1 Effective Density-of-States 327 $a2.3.1.1 Degenerate and Non-Degenerate Semiconductors 2.3.1.2 Intrinsic Fermi-Level and Concentration of Carriers; 2.3.2 Donors and Acceptors; 2.3.2.1 Extrinsic Semiconductors and Fermi Level; 2.3.2.2 Compensated Semiconductors; 2.3.2.3 Maximum Temperature of Operation of Extrinsic Semiconductors; 2.3.2.4 Quasi-Fermi Levels; 2.3.3 Largely Doped and Degenerate Semiconductors; 2.3.3.1 Bandgap Narrowing in Heavily Doped Semiconductors; 2.3.3.2 Reduction of the Impurity Ionization-Energy in Heavily Doped Semiconductors; 3. Transport Phenomena in Semiconductors 327 $a3.1 Thermal and Drift Motion in Semiconductors 3.1.1 Drift and Mobility; 3.1.1.1 Mobility in Silicon at High Electric Fields or Up to Large Doping Concentrations; 3.1.2 Resistivity; 3.2 Diffusion Mechanism; 3.2.1 Einstein's Relationship; 3.3 Thermal Equilibrium and Excess Carriers in Semiconductors; 3.3.1 Generation, Recombination Processes, and Carrier Lifetimes; 3.3.1.1 Bulk Processes in Direct Semiconductors; 3.3.1.2 Bulk Processes in Indirect Semiconductors; 3.3.1.3 Surface Recombination; 3.3.1.4 Lifetime of Minority Carriers in Silicon; 3.4 The Continuity Equations 327 $a3.4.1 The Dielectric Relaxation Time and Debye Length 330 $aThis book addresses the fundamental principles of interaction between radiation and matter, the principles of working and the operation of particle detectors based on silicon solid state devices. It covers a broad scope in the fields of application of radiation detectors based on silicon solid state devices from low to high energy physics experiments, including in outer space and in the medical environment. This book also covers state-of-the-art detection techniques in the use of radiation detectors based on silicon solid state devices and their readout electronics, including the latest develo 606 $aSemiconductor nuclear counters$xDesign and construction 606 $aSemiconductor nuclear counters$xMaterials 606 $aSilicon carbide 615 0$aSemiconductor nuclear counters$xDesign and construction. 615 0$aSemiconductor nuclear counters$xMaterials. 615 0$aSilicon carbide. 676 $a539.20287 700 $aLeroy$b Claude$0185045 701 $aRancoita$b Pier-Giorgio$0749957 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 906 $aBOOK 912 $a9910792056403321 996 $aSilicon solid state devices and radiation detection$93817975 997 $aUNINA