LEADER 05398nam 22006611 450 001 9910790864503321 005 20230222140743.0 010 $a0-12-810080-X 010 $a0-8155-1987-7 035 $a(CKB)2550000001160041 035 $a(EBL)1550523 035 $a(OCoLC)863203964 035 $a(SSID)ssj0001141564 035 $a(PQKBManifestationID)11695653 035 $a(PQKBTitleCode)TC0001141564 035 $a(PQKBWorkID)11090271 035 $a(PQKB)10168678 035 $a(Au-PeEL)EBL1550523 035 $a(CaPaEBR)ebr10800153 035 $a(CaONFJC)MIL543246 035 $a(MiAaPQ)EBC1550523 035 $a(EXLCZ)992550000001160041 100 $a20131209d2014 uy 0 101 0 $aeng 135 $aur|n|---||||| 181 $ctxt 182 $cc 183 $acr 200 10$aSputtering materials for VLSI and thin film devices /$fby Jaydeep Sarkar 205 $aFirst edition. 210 1$aOxford ;$aBoston :$cWilliam Andrew Publishing,$d2014. 215 $a1 online resource (614 p.) 300 $aDescription based upon print version of record. 311 $a0-8155-1593-6 311 $a1-306-11995-2 320 $aIncludes bibliographical references and index. 327 $aFront Cover; Sputtering Materials for VLSI and Thin Film Devices; Copyright Page; Contents; Preface; 1 Sputtering Targets and Sputtered Films for the Microelectronic Industry; 1.1 Materials for microelectronics; 1.1.1 Introduction; 1.1.1.1 Electrical conductivity; 1.1.2 Conductors; 1.1.3 Semiconductors; 1.1.4 Insulators; 1.2 Scope of sputtering in microelectronics; 1.3 Sputtering materials for integrated circuits; 1.3.1 Introduction; 1.3.2 Silicide contact; 1.3.3 Conductor, liner, barrier and anti-reflection coating; 1.3.4 Assembly and packaging (back-end processes) 327 $a1.3.4.1 Under bump metallization (UBM) and bond pad1.3.4.2 Through-silicon-via (TSV); 1.4 Sputtering materials for liquid crystal displays; 1.4.1 Introduction; 1.4.2 Active-matrix liquid crystal displays; 1.4.2.1 TFT array fabrication; 1.4.2.2 Cell assembly and Module assembly fabrication; 1.5 Sputtering materials for magnetic storage systems; 1.5.1 Introduction; 1.5.2 Thin film heads; 1.5.2.1 Inductive head; 1.5.2.2 Magnetoresistive head (MR heads); 1.5.2.3 Giant magnetoresistive head (GMR head); 1.5.3 Magnetic recording media; 1.6 Sputtering materials for optical storage media 327 $a1.7 Sputtering materials for photovoltaic devices1.7.1 Silicon wafer based solar cells; 1.7.2 Thin film solar cells; 1.8 Sputtering target industry; References; 2 Sputtering and Thin Film Deposition; 2.1 Introduction; 2.2 Physical vapor deposition; 2.3 Plasma and glow discharge; 2.4 Sputter deposition of thin films; 2.4.1 DC sputtering; 2.4.2 RF sputtering; 2.4.3 Reactive sputtering; 2.4.4 Magnetron sputtering; 2.4.4.1 Directional sputter deposition; 2.4.4.1.1 Long-throw sputter deposition; 2.4.4.1.2 Collimated sputter deposition; 2.4.4.2 Ionized physical vapor deposition (I-PVD) 327 $a2.4.4.3 Hollow cathode magnetron2.4.4.4 Magnetrons for large area coating; 2.5 Thin film characteristics; References; 3 Performance of Sputtering Targets and Productivity; 3.1 Introduction; 3.2 Target chemistry; 3.3 Target metallurgy; 3.3.1 Grain size inhomogeneity and banding of grains; 3.3.2 Second-phase particles, inclusions and porosity; 3.3.3 Preferred orientation of grains; 3.3.4 Sputter surface roughness and overall finish; 3.3.5 Particle performance; 3.3.6 Target bond characteristics; 3.4 Ferromagnetic targets; 3.5 Target cleaning and packaging; 3.6 Target burn-in 327 $a3.7 Target utilizationReferences; 4 Sputtering Target Manufacturing; 4.1 Introduction; 4.2 Designing sputtering targets; 4.3 Target material fabrication; 4.3.1 Liquid metallurgy processing of targets; 4.3.1.1 Cast structure; 4.3.1.1.1 Phase diagram and microstructure; 4.3.1.1.2 Melting and casting practice; 4.3.1.2 Segregation and inclusion; 4.3.1.3 Pipe and porosity; 4.3.2 Powder metallurgy processing of targets; 4.3.2.1 Powder preparation; 4.3.2.2 Powder compaction; 4.3.2.3 Powder consolidation using sintering; 4.3.2.3.1 Solid phase sintering; 4.3.2.3.2 Liquid phase sintering 327 $a4.3.2.3.3 Consolidation practice 330 $aAn important resource for the microelectronics and flat panel display industries, this book focuses on the development of sputtering targets for conductor, diffusion barrier, reflective, data storage and display applications. Sarkar reviews essential microelectronics industry topics, including: history and technology trends; chip making fundamentals; deposition and properties of thin films; and the role of sputtering target performance on overall production yield. Materials science fundamentals, types of metallic materials for conductors, diffusion barrier, data storage, and flat pan 606 $aMicroelectronics$xMaterials 606 $aFlat panel displays$xMaterials 606 $aSputtering (Physics) 615 0$aMicroelectronics$xMaterials. 615 0$aFlat panel displays$xMaterials. 615 0$aSputtering (Physics) 676 $a621.381 700 $aSarkar$b Jaydeep$01547457 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 906 $aBOOK 912 $a9910790864503321 996 $aSputtering materials for VLSI and thin film devices$93803858 997 $aUNINA LEADER 03210nam 2200781z- 450 001 9910743274303321 005 20230911 035 $a(CKB)5690000000228565 035 $a(oapen)doab113878 035 $a(EXLCZ)995690000000228565 100 $a20230920c2023uuuu -u- - 101 0 $aeng 135 $aurmn|---annan 181 $ctxt$2rdacontent 182 $cc$2rdamedia 183 $acr$2rdacarrier 200 00$aUse of Modern Materials in Technological Processes Accompanied by Frictional Heating 210 $cMDPI - Multidisciplinary Digital Publishing Institute$d2023 215 $a1 online resource (234 p.) 311 08$a3-0365-8462-5 330 $aThis reprint contains 14 articles published in the Special Issue, "Use of Modern Materials in Technological Processes Accompanied by Frictional Heating". These articles can be divided into five groups:1) Analytical modeling of the frictional heating process in systems made of homogeneous and functionally gradient materials (FGMs) [1-7];2) Numerical simulations of the temperature mode of railway brake systems [8, 9];3) Experimental studies and numerical simulations of the influence of various types of additives added to the friction material in the wet clutch disc [10, 11];4) Inverse thermal problems of friction [12];5) The influence of friction on the stress distribution in a composite containing thin elastic homogeneous inclusions, or that made of FGM [13, 14]. 606 $aHistory of engineering and technology$2bicssc 606 $aTechnology: general issues$2bicssc 610 $a1xBg brake configuration 610 $abimaterial 610 $abraking 610 $aceramic 610 $aclutch 610 $acomposite 610 $acomposites 610 $acrack 610 $acylindrical layers 610 $afinite element analysis 610 $afinite element method 610 $afriction 610 $afriction coefficient 610 $afriction material 610 $africtional heating 610 $afunctionally graded material 610 $afunctionally graded materials 610 $afunctionally gradient materials 610 $aheat partition ratio 610 $ainverse thermoelasticity problem 610 $ajump functions 610 $along-term braking 610 $amoving heat source 610 $anonperfect contact 610 $anumerical model 610 $arailway disc brake 610 $arailway tread brake 610 $arepetitive short-term braking 610 $arepetitive short-term braking operation 610 $aribbon-like reinforcement 610 $astable algorithm 610 $astress intensity factor 610 $atemperature 610 $athermal sensitivity 610 $athermal sensitivity of materials 610 $athin inclusion 610 $atribo-couple 610 $aunknown thermal loading 610 $aVolterra integral equation 615 7$aHistory of engineering and technology 615 7$aTechnology: general issues 906 $aBOOK 912 $a9910743274303321 996 $aUse of Modern Materials in Technological Processes Accompanied by Frictional Heating$93560541 997 $aUNINA