LEADER 01819nam 2200421 n 450 001 996383603803316 005 20221108084438.0 035 $a(CKB)1000000000587528 035 $a(EEBO)2240904631 035 $a(UnM)9928502600971 035 $a(UnM)99833019 035 $a(EXLCZ)991000000000587528 100 $a19951222d1685 uy | 101 0 $aeng 135 $aurbn||||a|bb| 200 12$aA true account and declaration of the horrid conspiracy against the late King, his present Majesty, and the government$b[electronic resource] $eas it was order'd to be published by His late Majesty 205 $aThe third edition. 210 $a[London] $cIn the Savoy: printed by Thomas Newcomb, one of His Majesties printers$d1685 215 $a[6], 167 p 300 $aFirst leaf = order to print, dated 23 May 1685. 300 $aEngraved plans of Rye House signed: I. Oliver sculp. 300 $aText is continuous despite pagination. 300 $aCaption title on p. 1 reads: A true account of the horrid conspiracy against the late King, His present Majesty, and the government. 300 $aImperfect; title page has heavy MS. notation; text incomplete, ends on p. 219. 300 $aReproduction of the original in the British Library. 330 $aeebo-0018 606 $aRye House Plot, 1683$vEarly works to 1800 615 0$aRye House Plot, 1683 700 $aSprat$b Thomas$f1635-1713.$01001087 702 $aOliver$b John$f1616-1701, 712 02$aEngland and Wales.$bSovereign (1685-1688 : James II) 801 0$bCu-RivES 801 1$bCu-RivES 801 2$bWaOLN 906 $aBOOK 912 $a996383603803316 996 $aA true account and declaration of the horrid conspiracy against the late king, His Present Majesty, and the government$92298696 997 $aUNISA LEADER 01703nam 2200385 a 450 001 9910701764703321 005 20120423090503.0 035 $a(CKB)5470000002420450 035 $a(OCoLC)787856446 035 $a(EXLCZ)995470000002420450 100 $a20120423d2012 ua 0 101 0 $aeng 135 $aurmn||||||||| 181 $ctxt$2rdacontent 182 $cc$2rdamedia 183 $acr$2rdacarrier 200 10$aU.S. coins$b[electronic resource] $ealternative scenarios suggest different benefits and losses from replacing the $1 note with a $1 coin : report to the Ranking Member, Subcommittee on Federal Financial Management, Government Information, Federal Services, and International Security, Committee on Homeland Security and Governmental Affairs, U.S. Senate 210 1$a[Washington, D.C.] :$cU.S. Govt. Accountability Office,$d[2012] 215 $a1 online resource (i, 16 pages) $cillustrations 300 $aTitle from PDF title screen (viewed Apr. 19, 2012). 300 $a"February 2012." 300 $a"GAO-12-307." 320 $aIncludes bibliographical references. 517 $aU.S. coins 606 $aCoins, American$xEconomic aspects 606 $aPaper money$xEconomic aspects$zUnited States 615 0$aCoins, American$xEconomic aspects. 615 0$aPaper money$xEconomic aspects 712 02$aUnited States.$bCongress.$bSenate.$bCommittee on Homeland Security and Governmental Affairs.$bSubcommittee on Federal Financial Management, Government Information, Federal Services, and International Security. 801 0$bGPO 801 1$bGPO 906 $aBOOK 912 $a9910701764703321 996 $aU.S. coins$93433487 997 $aUNINA LEADER 05539nam 22006731 450 001 9910789178803321 005 20230803201553.0 010 $a3-03826-205-6 035 $a(CKB)3710000000074211 035 $a(EBL)1910386 035 $a(SSID)ssj0001192310 035 $a(PQKBManifestationID)11627421 035 $a(PQKBTitleCode)TC0001192310 035 $a(PQKBWorkID)11227925 035 $a(PQKB)10816365 035 $a(MiAaPQ)EBC3038145 035 $a(Au-PeEL)EBL3038145 035 $a(CaPaEBR)ebr10803668 035 $a(OCoLC)868672758 035 $a(EXLCZ)993710000000074211 100 $a20111115h20142014 uy 0 101 0 $aeng 135 $aur|n|---||||| 181 $ctxt 182 $cc 183 $acr 200 10$aGettering and defect engineering in semiconductor technology XV $eselected papers from the 15th Gettering and Defect Engineering in Semiconductor Technology Conference (GADEST 2013), September 22-27, 2013, Oxford, UK /$fedited by J.D. Murphy 210 1$aDurnten-Zurich, Switzerland :$cTrans Tech Publications,$d[2014] 210 4$dİ2014 215 $a1 online resource (513 p.) 225 1 $aSolid state phenomena ;$v205-206 300 $aDescription based upon print version of record. 311 $a3-03785-824-9 320 $aIncludes bibliographical references and index. 327 $aGettering and Defect Engineering in Semiconductor Technology XV; Preface, Committees, Invited Speakers and Sponsor; Table of Contents; I. Defect Engineering in Silicon Solar Cells; Light-Induced Boron-Oxygen Recombination Centres in Silicon: Understanding their Formation and Elimination; Iron Management in Multicrystalline Silicon through Predictive Simulation: Point Defects, Precipitates, and Structural Defect Interactions; External and Internal Gettering of Interstitial Iron in Silicon for Solar Cells; Precipitation of Interstitial Iron in Multicrystalline Silicon 327 $aDirect Observation of Carrier Trapping Processes on Fe Impurities in mc-Si Solar CellsOn the Trade-Off between Industrially Feasible Silicon Surface Preconditioning Prior to Interface Passivation and Iron Contaminant Removal Effectiveness; II. Structural and Production Issues in Cast Silicon Materials for Solar Cells; Defect Generation and Propagation in Mc-Si Ingots: Influence on the Performance of Solar Cells; Characterisation of Dislocation-Content in Multicrystalline-Silicon Wafers 327 $aThe Impact of Dislocation Structure on Impurity Decoration of Dislocation Clusters in Multicrystalline SiliconAnalysis of Inhomogeneous Dislocation Distribution in Multicrystalline Si; Properties of Strong Luminescence at 0.93 eV in Solar Grade Silicon; 10 cm Diameter Mono Cast Si Growth and its Characterization; Characterization of Residual Strain in Si Ingots Grown by the Seed-Cast Method; III. Characterisation of Silicon for Solar Cells; Overview and Latest Developments in Photoconductance Lifetime Measurements in Silicon 327 $aEfficiency-Limiting Recombination in Multicrystalline Silicon Solar CellsPhotoluminescence Imaging of Silicon Bricks; Inline PL Inspection and Advanced Offline Evaluation of Passivation Defects, Charge and Interfaces; Transition Metal Precipitates in Mc Si: A New Detection Method Using 3D-FIB; A Comparison of EBIC, LBIC and XBIC Methods as Tools for Multicrystalline Si Characterization; IV. Intrinsic Point Defects in Silicon; Properties of Point Defects in Silicon: New Results after a Long-Time Debate; Fast and Slow Vacancies in Silicon 327 $aTheoretical Study of the Impact of Stress on the Behavior of Intrinsic Point Defects in Large-Diameter Defect-Free Si CrystalsV. Light Impurities in Silicon-Based Materials; First Principle Study of the Diffusion of Oxygen and Oxygen Complexes in Si, SiGe Solid Solutions and Si Nanocrystals; The Trivacancy and Trivacancy-Oxygen Family of Defects in Silicon; Monoisotopic 28Si in Spin Resonance Spectroscopy of Electrons Localized on Shallow Donors; Light-Element Impurities and their Reactions in Multicrystalline Si; Isotope-Dependent Phonon Trapping at Defects in Semiconductors 327 $aFormation of Single and Double Donor States of Trivacancy-Oxygen Complexes in P-Type Silicon 330 $aThe book includes both fundamental and technological aspects of defects in semiconductor materials and devices, including photovoltaics. The 74 papers are grouped as follows: I. Defect engineering in silicon solar cells; II. Structural and production issues in cast silicon materials for solar cells; III. Characterisation of silicon for solar cells; IV. Intrinsic point defects in silicon; V. Light impurities in silicon-based materials; VI. Metals in silicon: fundamental properties and gettering; VII. Extended and implantation-related defects in silicon; VIII. Surfaces, passivation and processin 410 0$aDiffusion and defect data.$nPt. B,$pSolid state phenomena ;$vv. 205-206. 606 $aSemiconductors$vCongresses 606 $aSolid state electronics$vCongresses 610 1 $aGettering 610 1 $aDefect engineering 610 1 $aSemiconductor technology 610 1 $aGADEST 615 0$aSemiconductors 615 0$aSolid state electronics 676 $a620.112972 701 $aMurphy$b J. David$01524977 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 906 $aBOOK 912 $a9910789178803321 996 $aGettering and defect engineering in semiconductor technology XV$93766088 997 $aUNINA