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035   $a(PQKBTitleCode)TC0001363004
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100   $a20121011d2013      uy             1
101 0 $aeng
135   $aur|n|---|||||
181   $ctxt
182   $cc
183   $acr
200 10$aIon implantation and activation$hVolume 3 /$fKunihiro Suzuki
210  1$aSharjah :$cBentham Science Publishers,$d2013.
215   $a1 online resource (212 p.)
225 1 $aIon Implantation and Activation
300   $aDescription based upon print version of record.
311   $a1-60805-793-3 
320   $aIncludes bibliographical references and index.
327   $aCover; Title; EUL; Contents; Preface; Acknowledgement; Chapter 01; Chapter 02; Chapter 03; Chapter 04; Chapter 05; Chapter 06; Chapter 07; Index
330   $aIon Implantation and Activation presents the derivation process of related models in a comprehensive step by step manner starting from the fundamental processes and moving up into the more advanced theories.Chapters in the book explain, in depth, various topics such as Pearson functions, LSS theory, Monte Carlo simulations, Edgeworth Polynomials and much more. This book provides advanced engineering and physics students and researchers with complete and coherent coverage of modern semiconductor process modeling.
410  0$aIon Implantation and Activation
606   $aIon implantation
606   $aIon accelerators
615  0$aIon implantation.
615  0$aIon accelerators.
700   $aSuzuki$b Kunihiro$01473061
801  0$bMiAaPQ
801  1$bMiAaPQ
801  2$bMiAaPQ
906   $aBOOK
912   $a9910787633803321
996   $aIon implantation and activation$93686112
997   $aUNINA