LEADER 05443nam 2200625 450 001 9910786396903321 005 20200520144314.0 010 $a3-03813-856-8 035 $a(CKB)2670000000348196 035 $a(EBL)1872887 035 $a(SSID)ssj0001141112 035 $a(PQKBManifestationID)11643375 035 $a(PQKBTitleCode)TC0001141112 035 $a(PQKBWorkID)11089344 035 $a(PQKB)11572006 035 $a(Au-PeEL)EBL1872887 035 $a(CaPaEBR)ebr10777688 035 $a(OCoLC)809121077 035 $a(MiAaPQ)EBC1872887 035 $a(EXLCZ)992670000000348196 100 $a20130417h20122012 uy 0 101 0 $aeng 135 $aur|n|---||||| 181 $ctxt 182 $cc 183 $acr 200 10$aDefects-recognition, imaging and physics in semiconductors XIV $eselected, peer reviewed papers from the 14th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors, September 25-29, 2011. Miyazaki, Japan /$fedited by Hiroshi Yamada-Kaneta and Akira Sakai 210 1$aDurnten-Zurich ;$aEnfield, NH :$cTrans Tech Publications,$d[2012] 210 4$dİ2012 215 $a1 online resource (300 p.) 225 1 $aMaterials science forum ;$vvol. 725 300 $aDescription based upon print version of record. 311 $a3-03785-442-1 327 $aDefects-Recognition, Imaging and Physics in Semiconductors XIV; Preface, Message and Committee; Table of Contents; Chapter 1: Defects in SiC; Imaging and Strain Analysis of Threading-Edge and Basal-Plane Dislocations in 4H-SiC Using X-Ray Three-Dimensional Topography; Threading Dislocations in 4H-SiC Observed by Double-Crystal X-Ray Topography; Characterization of Dislocation Structures in Hexagonal SiC by Transmission Electron Microscopy; Photoluminescence Imaging and Wavelength Analysis of Basal Plane Frank-Type Defects in 4H-SiC Epilayers 327 $aFormation of Nanovoids in Femtosecond Laser-Irradiated Single Crystals of Silicon CarbideElectron Beam Induced Current Observation of Dislocations in 4H-SiC Introduced by Mechanical Polishing; Basal Plane Dislocations in 4H-SiC Epilayers with Different Dopings; Frank Partial Dislocation in 4H-SiC Epitaxial Layer by MSE Method; Separation of the Driving Force and Radiation-Enhanced Dislocation Glide in 4H-SiC; Study of Defects Generated by Standard- and Plasma-Implantation of Nitrogen Atoms in 4H-SiC Epitaxial Layers 327 $aDifferent Dissociation Behavior of [11-20] and Non-[11-20] Basal Plane Dislocations in 4H-Si? under Electron Beam IrradiationDensity of Etch Pits on C-Face 4H-SiC Surface Produced by ClF3 Gas; Defect Related Leakage Current Components in SiC Schottky Barrier Diode; Rapid Terahertz Imaging of Carrier Density of 3C-SiC; Chapter 2: Nitride Materials and Devices; Cathodoluminescence Study of Ammonothermal GaN Crystals; The Effect of the Indenter Orientation on the Formation of Dislocations and Cracks in (0001) GaN Bulk Crystals; Defect Propagation from 3C-SiC to III-Nitride 327 $aCharacterization of Dislocations in GaN Thin Film and GaN/AlN MultilayerMicroscopic Degradation Analysis of RF-Stressed AlGaN/GaN HEMTs; Chapter 3: III-V Compounds and Devices; Distribution of Misfit Dislocations at the InGaAs/GaAs(001) Interface Observed by Monochromatic X-Ray Topography; Effects of in Content on Anisotropies in Strain Relaxation Processes of InGaAs/GaAs (001) Measured by Real-Time Three-Dimensional Reciprocal Space Mapping; Nitrogen Related Deep Levels in GaAsN Films Investigated by a Temperature Dependence of Piezoelectric Photothermal Signal 327 $aIntermixing in InP-Based Quantum Well Photonic Structures Induced by the Dry-Etching Process: A Spectral Imaging Cathodoluminescence StudyDefect Propagation in Broad-Area Diode Lasers; Kinetics of Defect Propagation during the Catastrophic Optical Damage (COD) in Broad-Area Diode Lasers; Nondestructive Measurement of Carrier Density in GaAs Using Relative Reflectivity of Two Terahertz Waves; Chapter 4: Photovoltaics: From Material to Module; Lock-In Thermography and Related Topics in Photovoltaic Research 327 $aEBIC Study on Metal Contamination at Intra Grain Defects in Multicrystalline Silicon for Solar Cells 330 $aThis volume documents the latest understanding of many topics of current interest in the science and technology of defects in semiconductors. The investigation of defects in semiconductors is a little different to that in other fields of materials science: in order to observe defects in semiconductors and elucidate their physical nature, a very wide range of tools and techniques has been introduced or created; thanks to the inventive ideas of the researchers. This work clearly reflects the lively state of defect investigation in semiconductors. Review from Book News Inc.: Drawn from papers del 410 0$aMaterials science forum ;$vv. 725. 606 $aSemiconductors$xDefects$vCongresses 606 $aPhysics$vCongresses 615 0$aSemiconductors$xDefects 615 0$aPhysics 676 $a620.112972 701 $aYamada-Kaneta$b Hiroshi$01471348 701 $aSakai$b Akira$c(Professor of engineering science)$064225 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 906 $aBOOK 912 $a9910786396903321 996 $aDefects-recognition, imaging and physics in semiconductors XIV$93683625 997 $aUNINA