LEADER 04285nam 2200649Ia 450 001 9910785910603321 005 20200520144314.0 010 $a1-283-73426-5 010 $a0-12-391859-6 035 $a(CKB)2670000000274757 035 $a(EBL)1058148 035 $a(OCoLC)818819266 035 $a(SSID)ssj0000756379 035 $a(PQKBManifestationID)12297244 035 $a(PQKBTitleCode)TC0000756379 035 $a(PQKBWorkID)10750400 035 $a(PQKB)10645389 035 $a(Au-PeEL)EBL1058148 035 $a(CaPaEBR)ebr10621135 035 $a(CaONFJC)MIL404676 035 $a(MiAaPQ)EBC1058148 035 $a(PPN)170607127 035 $a(EXLCZ)992670000000274757 100 $a20120924d2012 uy 0 101 0 $aeng 135 $aur|n|---||||| 181 $ctxt 182 $cc 183 $acr 200 00$aMolecular beam epitaxy$b[electronic resource] $efrom research to mass production /$fedited by Mohamed Henini 210 $aAmsterdam $cElsevier$dc2012 215 $a1 online resource (745 p.) 300 $aDescription based upon print version of record. 311 $a0-12-812137-8 311 $a0-12-387839-X 320 $aIncludes bibliographical references and index. 327 $aFront Cover; Molecular Beam Epitaxy: From research to mass production; Copyright; Contents; Preface; Contributors; Chapter 1 - Molecular beam epitaxy: fundamentals, historical background and future prospects; 1.1 INTRODUCTION; 1.2 BASICS OF MBE; 1.3 THE TECHNOLOGY OF MBE; 1.4 DIAGNOSTIC TECHNIQUES AVAILABLE IN MBE SYSTEMS; 1.5 THE PHYSICS OF MBE; 1.6 HISTORICAL BACKGROUND; 1.7 FUTURE PROSPECTS; 1.8 CONCLUSIONS; REFERENCES; Chapter 2 - Molecular beam epitaxy in the ultra-vacuum of space: present and near future; 2.1 INTRODUCTION; 2.2 WAKE SHIELD FACILITY; 2.3 SHIELD; 2.4 CURRENT STATUS 327 $a2.5 CONCLUSIONSREFERENCES; Chapter 3 - Growth of semiconductor nanowires by molecular beam epitaxy; 3.1 INTRODUCTION; 3.2 NANOWIRES GROWN BY MOLECULAR BEAM EPITAXY: AN OVERVIEW; 3.3 GROWTH DYNAMICS: MODELS AND EXPERIMENTAL STUDIES; 3.4 CHARACTERISATION AND STRUCTURAL COMPLEXITY; 3.5 OPTICAL PROPERTIES; 3.6 MBE-GROWN NANOWIRE DEVICES: FROM FUNDAMENTALS TO APPLICATIONS; 3.7 CONCLUSIONS; REFERENCES; Chapter 4 - Droplet epitaxy of nanostructures; 4.1 INTRODUCTION; 4.2 DROPLET EPITAXY; 4.3 DROPLET DEPOSITION; 4.4 NANOSTRUCTURE FORMATION; 4.5 CAPPING AND POST-GROWTH ANNEALING PROCEDURES 327 $a4.6 PULSED DROPLET EPITAXYACKNOWLEDGEMENTS; REFERENCES; Chapter 5 - Migration-enhanced epitaxy for low-dimensional structures; 5.1 INTRODUCTION; 5.2 AREA SELECTIVE EPITAXY BY MEE; 5.3 POLAR DIAGRAM OF THE GROWTH RATE OF III-V COMPOUND SEMICONDUCTORS; 5.4 FORMATION OF CRYSTAL FACETS AT THE BOUNDARIES OF MICROSTRUCTURES; 5.5 AREA SELECTIVE GROWTH ON (001) GAAS SUBSTRATE BY MEE USING AS4 AND AS2; 5.6 AREA SELECTIVE GROWTH ON (111)B GAAS SUBSTRATE BY MEE; 5.7 SUMMARY; ACKNOWLEDGEMENTS; REFERENCES; Chapter 6 - MBE growth of high-mobility 2DEG; 6.1 INTRODUCTION; 6.2 HIGH-MOBILITY MBE SYSTEM 327 $aChapter 10 - Effect of antimony coverage on InAs/GaAs (001) heteroepitaxy 330 $a This multi-contributor handbook discusses Molecular Beam Epitaxy (MBE), an epitaxial deposition technique which involves laying down layers of materials with atomic thicknesses on to substrates. It summarizes MBE research and application in epitaxial growth with close discussion and a 'how to' on processing molecular or atomic beams that occur on a surface of a heated crystalline substrate in a vacuum. MBE has expanded in importance over the past thirty years (in terms of unique authors, papers and conferences) from a pure research domain into commercial applications (prototype devi 606 $aMolecular beam epitaxy 606 $aOptoelectronic devices$xMaterials 606 $aSemiconductors$xMaterials 615 0$aMolecular beam epitaxy. 615 0$aOptoelectronic devices$xMaterials. 615 0$aSemiconductors$xMaterials. 676 $a621.3815 676 $a621.38152 701 $aHenini$b Mohamed$01500604 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 906 $aBOOK 912 $a9910785910603321 996 $aMolecular beam epitaxy$93782342 997 $aUNINA