LEADER 05479nam 2200649Ia 450 001 9910785000903321 005 20230607221535.0 010 $a981-277-776-8 035 $a(CKB)1000000000407242 035 $a(EBL)1679449 035 $a(OCoLC)879074203 035 $a(SSID)ssj0000123956 035 $a(PQKBManifestationID)11131877 035 $a(PQKBTitleCode)TC0000123956 035 $a(PQKBWorkID)10017183 035 $a(PQKB)11744195 035 $a(MiAaPQ)EBC1679449 035 $a(WSP)00004921 035 $a(Au-PeEL)EBL1679449 035 $a(CaPaEBR)ebr10201222 035 $a(CaONFJC)MIL505422 035 $a(EXLCZ)991000000000407242 100 $a20020619d2002 uy 0 101 0 $aeng 135 $aur|n|---||||| 181 $ctxt 182 $cc 183 $acr 200 00$aCMOS RF modeling, characterization and applications$b[electronic resource] /$feditors, M. Jamal Deen, Tor A. Fjeldly 210 $aRiver Edge, N.J. $cWorld Scientific$dc2002 215 $a1 online resource (422 p.) 225 1 $aSelected topics in electronics and systems ;$vv. 24 300 $aDescription based upon print version of record. 311 $a981-02-4905-5 320 $aIncludes bibliographical references. 327 $aCONTENTS ; Preface ; RF MOS Measurements ; 1 Characterizing Devices From DC To High Frequencies ; 2 DC Measurements As A Prerequisite For RF Setups ; 3 Capacitance Measurements At 1MHz ; 4 From Y-, Z-, And H-Parameters To S-Parameters; 5 Network Analyzer Measurements ; 6 Extending The Measurement Plane To The Transistor: De-embedding 327 $a7 Checking RF Measurement Data Consistency 8 Test Structures For MOS Transistors ; 9 Conclusions ; MOSFET Modeling and Parameter Extraction for RF IC's ; 1. Introduction ; 2. RF Modeling Approaches and Parameter Extraction Strategies for Two-Port Network 327 $a3. Three-Terminal RF MOSFET Modeling and Parameter Extraction Examples 4. Four-Terminal RF MOSFET Modeling and Parameter Extraction ; 5. Conclusions ; MOSFET Modeling for RF IC Design ; 1. Introduction ; 2. AC Small Signal Modeling ; 3 Noise Modeling ; 4. Summary 327 $aRF CMOS Noise Characterization and Modeling 1. Introduction ; 2. Noise Parameters ; 3. Noise Parameter Calculation of MOSFETs ; 4. De-embedding of Noise Parameters and Required Dummy Structures ; 5. Extraction of Noise Sources in Deep Sub-micron MOSFETs 327 $a6. Design Consideration for Low Noise Circuits 7. Noise Source Modeling ; 8. Conclusions ; SOI CMOS Transistors for RF and Microwave Applications ; 1. Introduction ; 2. Overview of SOI Material, Devices and Circuits; 3. Properties of Fully-Depleted SOI MOSFET's 327 $a4. Microwave Characterization of Passive Elements on the SOI Substrate 330 $aCMOS technology has now reached a state of evolution, in terms of both frequency and noise, where it is becoming a serious contender for radio frequency (RF) applications in the GHz range. Cutoff frequencies of about 50 GHz have been reported for 0.18 µm CMOS technology, and are expected to reach about 100 GHz when the feature size shrinks to 100 nm within a few years. This translates into CMOS circuit operating frequencies well into the GHz range, which covers the frequency range of many of today's popular wireless products, such as cell phones, GPS (global positioning system) and Bluetooth. Of course, the great interest in RF CMOS comes from the obvious advantages of CMOS technology in terms of production cost, high-level integration, and the ability to combine digital, analog and RF circuits on the same chip. This book discusses many of the challenges facing the CMOS RF circuit designer in terms of device modeling and characterization, which are crucial issues in circuit simulation and design. 410 0$aSelected topics in electronics and systems ;$vv. 24. 606 $aMetal oxide semiconductors, Complementary 606 $aSemiconductors 615 0$aMetal oxide semiconductors, Complementary. 615 0$aSemiconductors. 676 $a621.3815 701 $aDeen$b M. Jamal$0910434 701 $aFjeldly$b Tor A$0725317 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 906 $aBOOK 912 $a9910785000903321 996 $aCMOS RF modeling, characterization and applications$93781598 997 $aUNINA