LEADER 04003nam 2200685 a 450 001 9910784807003321 005 20230828213054.0 010 $a1-281-37331-1 010 $a9786611373313 010 $a981-277-337-1 035 $a(CKB)1000000000407647 035 $a(EBL)1679458 035 $a(OCoLC)879074241 035 $a(SSID)ssj0000245723 035 $a(PQKBManifestationID)11216245 035 $a(PQKBTitleCode)TC0000245723 035 $a(PQKBWorkID)10176988 035 $a(PQKB)11415028 035 $a(MiAaPQ)EBC1679458 035 $a(WSP)00006134 035 $a(Au-PeEL)EBL1679458 035 $a(CaPaEBR)ebr10201471 035 $a(CaONFJC)MIL137331 035 $a(EXLCZ)991000000000407647 100 $a20080815d2006 uy 0 101 0 $aeng 135 $aurcn||||||||| 181 $ctxt 182 $cc 183 $acr 200 00$aSiC materials and devices$hVol. 1$b[electronic resource] /$fedited by Michael Shur, Sergey Rumyantsev, Michael Levinshtein 210 $aNew Jersey $cWorld Scientific$d2006 215 $a1 online resource (342 p.) 225 1 $aSelected topics in electronics and systems ;$vv. 40 300 $aMaterial reprinted from International Journal of High Speed Electronics and Systems, v. 15 no. 4 (2005), with original paging in upper corner. 311 $a981-256-835-2 320 $aIncludes bibliographical references and index. 327 $aCONTENTS; Preface; Sic Material Properties; 1 Introduction; 2 Polytypism; 3 Band Structure and Effective Masses; 4 Thermal Properties; 5 Dopants and free charge carriers; 6 Diffusion of Dopants; 7 Impurity Conduction; 8 Minority Carrier Lifetime 327 $a9 Properties of SiC/SiO2 Interfaces Acknowledgments; References; SiC Homoepitaxy and Heteroepitaxy; 1 Introduction; 2 SiC homoepitaxial growth; 3 SiC heteroepitaxial growth; 4 Summary; References; Ohmic Contacts to SiC; 1 Introduction; 2 Metal-Semiconductor Contacts 327 $a3 Specific Contact Resistance 4 Ohmic Contacts to n-type SiC; 5 Ohmic Contacts to p-type SiC; 6 Long-Term Thermal Stability of Ohmic Contacts to SiC; 8 Conclusion; References; Silicon Carbide Schottky Barrier Diode 327 $a1 Introduction 2 SiC Schottky Contacts; 3 High Voltage SiC SBD JBS and MPS diodes; 4 Applications in Power Electronics Circuits; 5 Other Applications of SiC SBD; 6 Summary and Future Challenges; References; High Power SiC PiN Rectifiers; 1 Introduction 327 $a2 PiN Rectifier Design and Operation 3 Experimental Results on PiN Rectifiers; 4 Yield and Reliability of SiC Rectifiers; 5 Conclusions; Acknowledgements; References; Silicon Carbide Diodes for Microwave Applications; 1 Introduction; 2 Silicon Carbide Point-Contact Detectors 327 $a3 Silicon Carbide Varactors 330 $aAfter many years of research and development, silicon carbide has emerged as one of the most important wide band gap semiconductors. The first commercial SiC devices - power switching Schottky diodes and high temperature MESFETs - are now on the market. This two-volume book gives a comprehensive, up-to-date review of silicon carbide materials properties and devices. With contributions by recognized leaders in SiC technology and materials and device research, SiC Materials and Devices is essential reading for technologists, scientists and engineers who are working on silicon carbide or 410 0$aSelected topics in electronics and systems ;$vv. 40. 606 $aSilicon carbide$xElectric properties 606 $aSemiconductors 615 0$aSilicon carbide$xElectric properties. 615 0$aSemiconductors. 676 $a621.38152 701 $aShur$b Michael$0770441 701 $aRumyantsev$b Sergey L$01532842 701 $aLevinshtei?n$b M. E$g(Mikhail Efimovich)$01501796 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 906 $aBOOK 912 $a9910784807003321 996 $aSiC materials and devices$93779357 997 $aUNINA