LEADER 04946nam 2200661Ia 450 001 9910784745703321 005 20230828231534.0 010 $a1-281-86721-7 010 $a9786611867218 010 $a1-86094-903-7 035 $a(CKB)1000000000404173 035 $a(EBL)1681602 035 $a(OCoLC)815742041 035 $a(SSID)ssj0000176313 035 $a(PQKBManifestationID)11201738 035 $a(PQKBTitleCode)TC0000176313 035 $a(PQKBWorkID)10207354 035 $a(PQKB)11399784 035 $a(MiAaPQ)EBC1681602 035 $a(WSP)0000P437 035 $a(Au-PeEL)EBL1681602 035 $a(CaPaEBR)ebr10201253 035 $a(CaONFJC)MIL186721 035 $a(EXLCZ)991000000000404173 100 $a20060928d2006 uy 0 101 0 $aeng 135 $aur|n|---||||| 181 $ctxt 182 $cc 183 $acr 200 00$aIII-nitride$b[electronic resource] $esemiconductor materials /$feditor, Zhe Chuan Feng 210 $aLondon $cImperial College Press$dc2006 215 $a1 online resource (440 p.) 300 $aDescription based upon print version of record. 311 $a1-86094-636-4 320 $aIncludes bibliographical references. 327 $aCONTENTS ; Preface ; Chapter 1 Hydride vapor phase epitaxy of group III nitride materials ; 1.Introduction ; 2.Experiment ; 3.Material Properties ; 3.1. Undoped GaN layers ; 3.2. Si-doped GaN layers ; 3.3. Mg-doped GaN layers ; 3.4. Zn-doped GaN layers ; 3.5. AlN layers 327 $a3.6. AlGaN layers 3.7. InN and InGaN layers ; 4.New directions in HVPE development ; 4.1. Large area and multi wafer HVPE growth ; 4.2. Multi-layer structures ; 4.3. P-n junctions ; 4.4. Structures with two dimensional carrier gas ; 4.5. Nano structures and porous materials 327 $a5.Applications of HVPE grown group III nitride materials 5.1. Substrate applications ; 5.1.1. Template substrates ; 5.1.2. Free-standing substrates ; 5.1.3. Bulk substrates ; 5.2. Device Applications ; 6.Conclusions 327 $aChapter 2 Planar MOVPE technology for epitaxy of III-nitride materials 1. History of Reactor Development for III-Nitrides ; 2. Types of Planar Reactors ; 3. Reactor Modeling ; 3.1. Growth Kinetics of Group-III Nitride MOVPE ; 3.2. Modeling of MOVPE processes 327 $a3.3. Horizontal Tube Reactors: Flow Dynamics and Reactor Technology 3.4. Planetary Reactors: Transport Phenomena & Parameter Dependencies ; 4. In-situ Technology in Nitride MOCVD Systems ; 5. The Mass Production of GaN and Related Materials ; 5.1. Optoelectronic Device Structures 327 $a5.2. Growth in the 8x4 inch Configuration 330 $a III-Nitride semiconductor materials - (Al, In, Ga)N - are excellent wide band gap semiconductors very suitable for modern electronic and optoelectronic applications. Remarkable breakthroughs have been achieved recently, and current knowledge and data published have to be modified and upgraded. This book presents the new developments and achievements in the field. Written by renowned experts, the review chapters in this book cover the most important topics and achievements in recent years, discuss progress made by different groups, and suggest future directions. Each chapter also describes th 606 $aSemiconductors$xMaterials 606 $aNitrides 615 0$aSemiconductors$xMaterials. 615 0$aNitrides. 676 $a541.377 676 $a541/.377 676 $a621.38152 701 $aFeng$b Zhe Chuan$01571109 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 906 $aBOOK 912 $a9910784745703321 996 $aIII-nitride$93845283 997 $aUNINA