LEADER 03817nam 2200649Ia 450 001 9910784046703321 005 20230721025449.0 010 $a1-281-12088-X 010 $a9786611120887 010 $a981-270-758-1 035 $a(CKB)1000000000334209 035 $a(EBL)312290 035 $a(OCoLC)476099467 035 $a(SSID)ssj0000205772 035 $a(PQKBManifestationID)11217681 035 $a(PQKBTitleCode)TC0000205772 035 $a(PQKBWorkID)10193133 035 $a(PQKB)10746105 035 $a(MiAaPQ)EBC312290 035 $a(WSP)00006157 035 $a(Au-PeEL)EBL312290 035 $a(CaPaEBR)ebr10188741 035 $a(CaONFJC)MIL112088 035 $a(OCoLC)173612115 035 $a(EXLCZ)991000000000334209 100 $a20070503d2007 uy 0 101 0 $aeng 135 $aur|n|---||||| 181 $ctxt 182 $cc 183 $acr 200 10$aMosfet modeling for VLSI simulation$b[electronic resource] $etheory and practice /$fNarain Arora 210 $aSingapore $cWorld Scientific$dc2007 215 $a1 online resource (633 p.) 225 1 $aInternational series on advances in solid state electronics and technology 300 $aDescription based upon print version of record. 311 $a981-256-862-X 320 $aIncludes bibliographical references and index. 327 $aForeword; Preface; Contents; List of Symbols; Acronyms; 1 Overview; 2 Review of Basic Semiconductor and pn Junction Theory; 3 MOS Transistor Structure and Operation; 4 MOS Capacitor; 5 Threshold Voltage; 6 MOSFET DC Model; 7 Dynamic Model; 8 Modeling Hot-Carrier Effects; 9 Data Acquisition and Model Parameter Measurements; 10 Model Parameter Extraction Using Optimization Method; 11 SPICE Diode and MOSFET Models and Their Parameters; 12 Statistical Modeling and Worst-case Design Parameters; Appendix A. Important Properties of Silicon, Silicon Dioxide and Silicon Nitride at 300K 327 $aAppendix B. Some Important Physical Constants at 300 KAppendix C. Unit Conversion Factors; Appendix D. Magnitude Prefixes; Appendix E. Methods of Calculating s from the Implicit Eq. (6.23) or (6.30); Appendix F. Charge Based MOSFET Intrinsic Capacitances; Appendix G. Linear Regression; Appendix H. Basic Statistical and Probability Theory; Appendix I. List of Widely Used Statistical Package Programs; 862-X1-missing.pdf; Subject Index 330 $aA reprint of the classic text, this book popularized compact modeling of electronic and semiconductor devices and components for college and graduate-school classrooms, and manufacturing engineering, over a decade ago. The first comprehensive book on MOS transistor compact modeling, it was the most cited among similar books in the area and remains the most frequently cited today. The coverage is device-physics based and continues to be relevant to the latest advances in MOS transistor modeling. This is also the only book that discusses in detail how to measure device model parameters required 410 0$aInternational series on advances in solid state electronics and technology. 606 $aMetal oxide semiconductor field-effect transistors 606 $aIntegrated circuits$xVery large scale integration 606 $aIntegrated circuits$xVery large scale integration$xComputer simulation 615 0$aMetal oxide semiconductor field-effect transistors. 615 0$aIntegrated circuits$xVery large scale integration. 615 0$aIntegrated circuits$xVery large scale integration$xComputer simulation. 676 $a621.395 700 $aArora$b N$g(Narain),$f1943-$01576936 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 906 $aBOOK 912 $a9910784046703321 996 $aMosfet modeling for VLSI simulation$93855085 997 $aUNINA