LEADER 01254cam--2200385---450- 001 990002677120203316 005 20151215122405.0 010 $a88-387-3155-1 035 $a000267712 035 $aUSA01000267712 035 $a(ALEPH)000267712USA01 035 $a000267712 100 $a20051025h2005----km-y0itay0103----ba 101 $aita 102 $aIT 105 $a||||||||001yy 200 1 $aPregeo 8$eambiti di applicazione, metodologie di rilievo, esempi svolti$fGiuseppe Mangione 210 $aSantacangelo di Romagna$cMaggioli$dcopyr. 2005 215 $a110 p.$d30 cm$e1 CD-Rom 225 2 $aEdilizia & Urbanistica$v111 410 0$12001$aEdilizia & Urbanistica$v146 606 0 $aRilevamento topografico$xImpiego [di] Pregeo 8 $2BNCF 676 $a526.98 700 1$aMANGIONE,$bGiuseppe$0591924 801 0$aIT$bsalbc$gISBD 912 $a990002677120203316 951 $a526.98 MAN$b47892 G.$c526.98 MAN$d00118208 959 $aBK 969 $aTEC 979 $aMARIASEN$b90$c20051025$lUSA01$h1024 979 $aFIORELLA$b90$c20070601$lUSA01$h1236 979 $aFIORELLA$b90$c20120201$lUSA01$h1452 979 $aCHIARA$b90$c20151215$lUSA01$h1224 996 $aPregeo 8$91002659 997 $aUNISA LEADER 03580nam 2200637Ia 450 001 9910784046503321 005 20230721025431.0 010 $a1-281-12087-1 010 $a9786611120870 010 $a981-270-759-X 035 $a(CKB)1000000000334210 035 $a(EBL)312288 035 $a(OCoLC)476099450 035 $a(SSID)ssj0000205771 035 $a(PQKBManifestationID)11187279 035 $a(PQKBTitleCode)TC0000205771 035 $a(PQKBWorkID)10212540 035 $a(PQKB)10141285 035 $a(MiAaPQ)EBC312288 035 $a(WSP)00006111 035 $a(Au-PeEL)EBL312288 035 $a(CaPaEBR)ebr10188796 035 $a(CaONFJC)MIL112087 035 $a(OCoLC)935264138 035 $a(EXLCZ)991000000000334210 100 $a20070607d2007 uy 0 101 0 $aeng 135 $aur|n|---||||| 181 $ctxt 182 $cc 183 $acr 200 10$aMOSFET modeling for circuit analysis and design$b[electronic resource] /$fCarlos Galup-Montoro, Ma?rcio Cherem Schneider 210 $aSingapore ;$aHackensack, NJ $cWorld Scientific$dc2007 215 $a1 online resource (445 p.) 225 1 $aInternational series on advances in solid state electronics and technology 300 $aDescription based upon print version of record. 311 $a981-256-810-7 320 $aIncludes bibliographical references and index. 327 $aForeword; Preface; Contents; List of Selected Symbols; Chapter 1 Introduction; Chapter 2 The MOS Capacitor; Chapter 3 The Long-Channel MOSFET: Theory and dc Equations; Chapter 4 The Real MOS Transistor: dc Models; Chapter 5 Stored Charges and Capacitive Coefficients; Chapter 6 Mismatch Modeling; Chapter 7 Noise in MOSFETs; Chapter 8 High-Frequency Models; Chapter 9 Gate and Bulk Currents; Chapter 10 Advanced MOSFET Structures; Chapter 11 MOSFET Parameter Extraction; Chapter 12 Advanced MOSFET Models for Circuit Simulators; Appendix A Electrostatics in One Dimension 327 $aAppendix B Electrostatics in SemiconductorsAppendix C Drift-diffusion Current Model; Appendix D Continuity Equations; Appendix E Basics of pn Junctions; Appendix F Hall-Shockley-Read (HSR) Statistics; Appendix G Interface Trap Capacitance; Index 330 $aThis is the first book dedicated to the next generation of MOSFET models. Addressed to circuit designers with an in-depth treatment that appeals to device specialists, the book presents a fresh view of compact modeling, having completely abandoned the regional modeling approach. Both an overview of the basic physics theory required to build compact MOSFET models and a unified treatment of inversion-charge and surface-potential models are provided. The needs of digital, analog and RF designers as regards the availability of simple equations for circuit designs are taken into account. Compact ex 410 0$aInternational series on advances in solid state electronics and technology. 606 $aMetal oxide semiconductor field-effect transistors$xMathematical models 606 $aField-effect transistors$xMathematical models 615 0$aMetal oxide semiconductor field-effect transistors$xMathematical models. 615 0$aField-effect transistors$xMathematical models. 676 $a621.3815284 700 $aGalup-Montoro$b Carlos$01576935 701 $aSchneider$b Ma?rcio Cherem$01195122 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 906 $aBOOK 912 $a9910784046503321 996 $aMOSFET modeling for circuit analysis and design$93855083 997 $aUNINA