LEADER 04314nam 22007692 450 001 9910783128703321 005 20151005020622.0 010 $a1-107-12918-4 010 $a1-280-41796-X 010 $a9786610417964 010 $a0-511-17981-2 010 $a1-139-14645-9 010 $a0-511-06690-2 010 $a0-511-06059-9 010 $a0-511-33086-3 010 $a0-511-75459-0 010 $a0-511-06903-0 035 $a(CKB)1000000000017982 035 $a(EBL)217760 035 $a(OCoLC)475924183 035 $a(SSID)ssj0000171093 035 $a(PQKBManifestationID)11922759 035 $a(PQKBTitleCode)TC0000171093 035 $a(PQKBWorkID)10236759 035 $a(PQKB)10933294 035 $a(UkCbUP)CR9780511754593 035 $a(Au-PeEL)EBL217760 035 $a(CaPaEBR)ebr10069937 035 $a(CaONFJC)MIL41796 035 $a(MiAaPQ)EBC217760 035 $a(PPN)261362682 035 $a(EXLCZ)991000000000017982 100 $a20100422d2002|||| uy| 0 101 0 $aeng 135 $aur||||||||||| 181 $ctxt$2rdacontent 182 $cc$2rdamedia 183 $acr$2rdacarrier 200 10$aHigh-speed heterostructure devices $efrom device concepts to circuit modeling /$fPatrick Roblin and Hans Rohdin$b[electronic resource] 210 1$aCambridge :$cCambridge University Press,$d2002. 215 $a1 online resource (xxxiv, 688 pages) $cdigital, PDF file(s) 300 $aTitle from publisher's bibliographic system (viewed on 05 Oct 2015). 311 $a0-521-02423-4 311 $a0-521-78152-3 320 $aIncludes bibliographical references and index. 327 $aCover; Half-title; Title; Copyright; Dedication; Contents; Preface; Acknowledgements; List of abbreviations; Introduction; 1 Heterostructure materials; 2 Semiclassical theory of heterostructures; 3 Quantum theory of heterostructures; 4 Quantum heterostructure devices; 5 Scattering processes in heterostructures; 6 Scattering-assisted tunneling; 7 Frequency response of quantum devices from DC to infrared; 8 Charge control of the two-dimensional electron gas; 9 High electric field transport; 10 I-V model of the MODFET; 11 Small-and large-signal AC models for the long-channel MODFET 327 $a12 Small-and large-signal AC models for the short-channel MODFET13 DC and microwave electrothermal modeling of FETs; 14 Analytical DC analysis of short-gate MODFETs; 15 Small-signal AC analysis of the short-gate velocity-saturated MODFET; 16 Gate resistance and the Schottky-barrier interface; 17 MODFET high-frequency performance; 18 Modeling high-performance HBTs; 19 Practical high-frequency HBTs; Index 330 $aFuelled by rapid growth in communications technology, silicon heterostructures and related high-speed semiconductors are spearheading the drive toward smaller, faster and lower power devices. High-Speed Heterostructure Devices is a textbook on modern high-speed semiconductor devices intended for both graduate students and practising engineers. This book is concerned with the underlying physics of heterostructures as well as some of the most recent techniques for modeling and simulating these devices. Emphasis is placed on heterostructure devices of the immediate future such as the MODFET, HBT and RTD. The principles of operation of other devices such as the Bloch Oscillator, RITD, Gunn diode, quantum cascade laser and SOI and LD MOSFETs are also introduced. Initially developed for a graduate course taught at Ohio State University, the book comes with a complete set of homework problems and a web link to MATLAB programs supporting the lecture material. 606 $aSemiconductors 606 $aVery high speed integrated circuits 606 $aHeterostructures 606 $aTransistors 606 $aLow voltage integrated circuits 615 0$aSemiconductors. 615 0$aVery high speed integrated circuits. 615 0$aHeterostructures. 615 0$aTransistors. 615 0$aLow voltage integrated circuits. 676 $a621.3815/2 700 $aRoblin$b Patrick$f1958-$0770671 702 $aRohdin$b Hans$f1954- 801 0$bUkCbUP 801 1$bUkCbUP 906 $aBOOK 912 $a9910783128703321 996 $aHigh-speed heterostructure devices$93807135 997 $aUNINA