LEADER 05470nam 2200673Ia 450 001 9910782282303321 005 20230617000915.0 010 $a1-281-92823-2 010 $a9786611928230 010 $a981-277-554-4 035 $a(CKB)1000000000537915 035 $a(EBL)1679444 035 $a(OCoLC)879074184 035 $a(SSID)ssj0000097844 035 $a(PQKBManifestationID)11130695 035 $a(PQKBTitleCode)TC0000097844 035 $a(PQKBWorkID)10120718 035 $a(PQKB)11361493 035 $a(MiAaPQ)EBC1679444 035 $a(WSP)00005209 035 $a(Au-PeEL)EBL1679444 035 $a(CaPaEBR)ebr10255859 035 $a(CaONFJC)MIL192823 035 $a(EXLCZ)991000000000537915 100 $a20031204d2003 uy 0 101 0 $aeng 135 $aur|n|---||||| 181 $ctxt 182 $cc 183 $acr 200 00$aAdvanced semiconductor heterostructures$b[electronic resource] $enovel devices, potential device applications and basic properties /$feditors, Mitra Dutta, Michael A. Stroscio 210 $aSingapore ;$aRiver Edge, N.J. $cWorld Scientific$dc2003 215 $a1 online resource (244 p.) 225 1 $aSelected topics in electronics and systems ;$vv. 28 300 $aDescription based upon print version of record. 311 $a981-238-289-5 320 $aIncludes bibliographical references. 327 $aCONTENTS; PREFACE; ELECTRON-PHONON INTERACTIONS IN INTERSUBBAND LASER HETEROSTRUCTURES; 1. Introduction; 2. Dielectric Continuum Model for Polar Excitations in Layered Heterostructures; 2.1. LO-phonon confinement in layered heterostructures; 2.2. Examples of scattering rate tailoring; 3. Multiband Description of Electron Confinement; 3.1. Analytical representation for the eigenstates; 3.2. Phenomenological boundary conditions; 3.3. Electron energy spectrum of basic heterostructures; 4. Subband Depopulation in Type-II Laser Heterostructures 327 $a4.1. Interband tunneling in InAs/GaSb ""leaky"" heterostructure4.2. Phonon enhancement of the depopulation process; 5. Conclusions; Acknowledgments; References; QUANTUM DOT INFRARED DETECTORS AND SOURCES; 1. Introduction; 2. Historical Background; 3. Self-Organized Quantum Dots for Devices; 4. Electronic Spectra and Carrier Dynamics in Self-Organized Quantum Dots; 5. Quantum Dot Infrared Detectors and Focal Plane Arrays; 6. Quantum Dot Infrared Sources; 7. Future Prospects; Acknowledgments; References; Generation of Terahertz Emission Based on Intersubband Transitions; 1. Introduction 327 $a2. Electrically pumped intersubband THz emitters2.1 THz emitters using electron-LO-phonon scattering for depopulation; 2.2. Role of interface and confined phonon modes; 2.3. Intrawell THz emitters using resonant tunneling for depopulation; 2.4 Transport issues of electrically pumped THz intersubband emitters; 3. Optically pumped intersubband THz emitters; 3.1 Intersubband pumped THz optical parametric oscillators (OPOs); 3.2 Intersubband optically pumped THz lasers; 3.3 Interband optically pumped THz emitters; Acknowledgments; References 327 $aMID-INFRARED GaSb-BASED LASERS WITH TYPE-I HETEROINTERFACES1. Introduction; 2. Progress in the Design of Type-I GaSb-based Diode Lasers; 3. High-power Room-temperature CW Diode Lasers Operating in the Wavelength Range of 2.3 - 2.6-?m; 4. Conclusion; Acknowledgement; References; ADVANCES IN QUANTUM-DOT RESEARCH AND TECHNOLOGY: THE PATH TO APPLICATION IN BIOLOGY; 1. Introduction; 2. Recent Developments in the Application of Quantum Dots to Biology; 3. Recent Developments in GaAs-Based Quantum Dots; 4. Recent Developments in InAs-Based Quantum Dots 327 $a5. Recent Developments in GaSb-, GaN-, PbS-, CdTe-, InP-, and PbSe-Based Quantum Dots6. Recent Developments in CdSe-Based Quantum Dots; 7. Implementing Quantum Dot Technology in Biological Applications; Acknowledgments; References; HIGH-FIELD ELECTRON TRANSPORT CONTROLLED BY OPTICAL PHONON EMISSION IN NITRIDES; 1. Introduction; 2. The Basic Equations; 2.1. The Boltzmann equation; 2.2. New variables; 2.3. Boundary conditions; 3. Solutions of the Kinetic Equation; 3.1. General structure of solutions; 3.2. Relationships between f+, f- and F+, F-; 3.3. The zero energy stair s = 0 327 $a3.4- The first stair s = 1 330 $a This volume provides valuable summaries on many aspects of advanced semiconductor heterostructures and highlights the great variety of semiconductor heterostructures that has emerged since their original conception. As exemplified by the chapters in this book, recent progress on advanced semiconductor heterostructures spans a truly remarkable range of scientific fields with an associated diversity of applications. Some of these applications will undoubtedly revolutionize critically important facets of modern technology. At the heart of these advances is the ability to design and control the p 410 0$aSelected topics in electronics and systems ;$vv. 28. 606 $aHeterostructures 606 $aSemiconductors$xMaterials 615 0$aHeterostructures. 615 0$aSemiconductors$xMaterials. 676 $a621.38152 701 $aDutta$b Mitra$0150985 701 $aStroscio$b Michael A.$f1949-$062280 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 906 $aBOOK 912 $a9910782282303321 996 $aAdvanced semiconductor heterostructures$93831358 997 $aUNINA