LEADER 01112nam0-2200349---450- 001 990009805520403321 005 20140108093439.0 010 $a978-88-204-0398-0 035 $a000980552 035 $aFED01000980552 035 $a(Aleph)000980552FED01 035 $a000980552 100 $a20140108d2012----km-y0itay50------ba 101 0 $aita 102 $aIT 105 $aa-------001yy 200 1 $a<>qualità per la competitività dell'impresa$eFranco Di Giacomo, Nicola Casolani$fcoordinamento editoriale di Stefano Oronzo 210 $aMilano$cFrancoAngeli$d2012 215 $a272 p.$cill.$d23 cm 225 1 $aEconomia$iStrumenti$v72 610 0 $aAziende agroalimentari$aControllo di qualità 676 $a664.00685$v22$zita 700 1$aDi Giacomo,$bFranco$f<1946- >$0521735 701 1$aCasolani,$bNicola$0521736 702 1$aOronzo,$bStefano 801 0$aIT$bUNINA$gREICAT$2UNIMARC 901 $aBK 912 $a990009805520403321 952 $aCollez. 2216 (72)$b50610$fFSPBC 959 $aFSPBC 996 $aQualità per la competitività dell'impresa$9837379 997 $aUNINA LEADER 02913oam 2200709I 450 001 9910781525203321 005 20200520144314.0 010 $a1-315-21830-5 010 $a1-351-83419-3 010 $a1-280-12159-9 010 $a9786613525451 010 $a1-4398-0746-9 024 7 $a10.1201/b11354 035 $a(CKB)2550000000074867 035 $a(EBL)826926 035 $a(SSID)ssj0000571062 035 $a(PQKBManifestationID)11364060 035 $a(PQKBTitleCode)TC0000571062 035 $a(PQKBWorkID)10610948 035 $a(PQKB)11192464 035 $a(Au-PeEL)EBL826926 035 $a(CaPaEBR)ebr10517996 035 $a(CaONFJC)MIL352545 035 $a(OCoLC)899154965 035 $a(OCoLC)773316150 035 $a(CaSebORM)9781439807460 035 $a(MiAaPQ)EBC826926 035 $a(EXLCZ)992550000000074867 100 $a20180331d2012 uy 0 101 0 $aeng 135 $aur|n|---||||| 181 $ctxt 182 $cc 183 $acr 200 10$aNonvolatile memory design $emagnetic, resistive, and phase change /$fHai Li, Yiran Chen 210 1$aBoca Raton, Fla. :$cCRC Press,$d2012. 215 $a1 online resource (200 p.) 300 $aDescription based upon print version of record. 311 $a1-138-07663-5 311 $a1-4398-0745-0 320 $aIncludes bibliographical references. 327 $a1. Introduction to semiconductor memories -- 2. Phase change memory -- 3. Spin-transfer torque RAM -- 4. Resistive random access memory -- 5. Memristors -- 6. The future of nonvolatile memory. 330 $aThe manufacture of flash memory, which is the dominant nonvolatile memory technology, is facing severe technical barriers. So much so, that some emerging technologies have been proposed as alternatives to flash memory in the nano-regime. Nonvolatile Memory Design: Magnetic, Resistive, and Phase Changing introduces three promising candidates: phase-change memory, magnetic random access memory, and resistive random access memory. The text illustrates the fundamental storage mechanism of these technologies and examines their differences from flash memory techniques. Based on the latest advances, 606 $aSemiconductor storage devices 606 $aMagnetic memory (Computers) 606 $aFlash memories (Computers) 606 $aChange of state (Physics)$xIndustrial applications 615 0$aSemiconductor storage devices. 615 0$aMagnetic memory (Computers) 615 0$aFlash memories (Computers) 615 0$aChange of state (Physics)$xIndustrial applications. 676 $a004.568 676 $a621.39732 700 $aLi$b Hai$f1975,$01559845 701 $aChen$b Yiran$f1976-$01559846 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 906 $aBOOK 912 $a9910781525203321 996 $aNonvolatile memory design$93825383 997 $aUNINA