LEADER 05268oam 2200589 450 001 9910779883603321 005 20190911112728.0 010 $a981-4383-72-4 035 $a(OCoLC)865027028 035 $a(MiFhGG)GVRL8REH 035 $a(EXLCZ)992550000001096035 100 $a20141110h20132013 uy 0 101 0 $aeng 135 $aurun|---uuuua 181 $ctxt 182 $cc 183 $acr 200 10$aFrontiers in electronics $eproceedings of the workshop on frontiers in electronics 2009, Rincon, Puerto Rico, 13-16 December 2009 /$feditors, Sorin Cristoloveanu, Grenoble INP, Minatec, France, Michael S. Shur, Rensselaer Polytechnic Institute, USA 210 $aRiver Edge, N.J. $cWorld Scientific$dc2009 210 1$aNew Jersey :$cWorld Scientific,$d[2013] 210 4$d?2013 215 $a1 online resource (ix, 230 pages) $cillustrations (some color) 225 1 $aSelected Topics in Electronics and Systems ;$vv.52 300 $aDescription based upon print version of record. 311 $a981-4383-71-6 311 $a1-299-71359-9 320 $aIncludes bibliographical references and index. 327 $aPreface; CONTENTS; Advanced Terahertz and Photonics Devices; Broadband Terahertz Wave Generation, Detection and Coherent Control Using Terahertz Gas Photonics J. Liu, J. Dai, X. Lu, I. C. Ho and X. C. Zhang; 1. Introduction; 2. The Mechanism of THz Generation and Detection in Gas; 3. THz Wave Generation and Detection in Different Gases; 4. THz Remote Generation and Detection; 5. Coherent Control of THz Generation; 6. Conclusion; Acknowledgement; References; How do We Lose Excitation in the Green? C. Wetzel, Y. Xia, W. Zhao, Y. Li, M. Zhu, S. You, L. Zhao, W. Hou, C. Stark and M. Dibiccari 327 $a1. Introduction2. Material and Methods; 3. Experimental; 4. Discussion; 5. Conclusions; Acknowledgments; References; Silicon Finfets as Detectors of Terahertz and Sub-Terahertz Radiation W. Stillman, C. Donais, S. Rumyantsev, M. Shur, D. Veksler, C. Hobbs, C. Smith, G. Bersuker, W. Taylor and R. Jammy; 1. Introduction; 2. Plasma Wave Detectors; 3. FinFET Structure; 4. Response Measurements; 5. Noise Equivalent Power; 6. Conclusion; Acknowledgments; References 327 $aProgress in Development of Room Temperature CW GaSb based Diode Lasers for 2-3.5 ?m Spectral Region T. Hosoda, J. Chen, G. Tsvid, D. Westerfeld, R. Liang, G. Kipshidze, L. Shterengas and G. Belenky1. Introduction; 2. Results and Discussion; 2.1. Waveguide core width and asymmetry optimization for 2 ?m emitting devices; 2.2. CW power characteristics over 2.2 to 3.3 ?m wavelength range; 3. Conclusion; Acknowledgements; References; WDM Demultiplexing by Using Surface Plasmon Polaritons D. K. Mynbaev and V. Sukharenko; 1. Introduction; 2. The Frequency of SPPs 327 $a3. The Concept of WDM Demultiplexing with SPPs4. Summary; Acknowledgment; References; Silicon and Germanium on Insulator and Advanced CMOS and MOSHFETs; Connecting Electrical and Structural Dielectric Characteristics G. Bersuker, D. Veksler, C. D. Young, H. Park, W. Taylor, P. Kirsch, R. Jammy, L. Morassi, A. Padovani and L. Larcher; 1. Introduction; 2. Noise Generating Defects in High-k Gate Stacks; 2.1. Analysis of Random Telegraph Signal Noise (RTN); 2.2. Extracting defect characteristics; 3. Defects Responsible for High-k Gate Stack Degradation/Breakdown 327 $a3.1. Physical evidences of O-vacancies in IL3.2. Defects identification; 4. Vfb Roll-Off Phenomenon; 4.1. Roll-off mechanism; 4.2. Generation of positively charged defects; 4.3. Origin of R-O defects and R-O suppression; References; Advanced Solutions for Mobility Enhancement in SOI MOSFETs L. Pham-Nguyen, C. Fenouillet-Beranger, P. Perreau, S. Denorme, G. Ghibaudo, O. Faynot, T. Skotnicki, A. Ohata, M. Casse, I. Ionica, W. van den Daele, K-H. Park, S-J. Chang, Y-H. Bae, M. Bawedin and S. Cristoloveanu; 1. Introduction; 2. Series Resistance Reduction; 3. High-K Dielectrics; 4. Metal Gate 327 $a5. Strain 330 $aFrontiers in Electronics is divided into four sections: advanced terahertz and photonics devices; silicon and germanium on insulator and advanced CMOS and MOSHFETs; nanomaterials and nanodevices; and wide band gap technology for high power and UV photonics. This book will be useful for nano-microelectronics scientists, engineers, and visionary research leaders. It is also recommended to graduate students working at the frontiers of the nanoelectronics and microscience. 410 0$aSelected topics in electronics and systems ;$vvol. 52. 606 $aElectronics$xTechnological innovations$vCongresses 606 $aNanoelectromechanical systems$vCongresses 606 $aOptoelectronics$vCongresses 606 $aMetal oxide semiconductors, Complementary$vCongresses 615 0$aElectronics$xTechnological innovations 615 0$aNanoelectromechanical systems 615 0$aOptoelectronics 615 0$aMetal oxide semiconductors, Complementary 676 $a621.381 702 $aCristoloveanu$b Sorin 702 $aShur$b Michael 801 0$bMiFhGG 801 1$bMiFhGG 906 $aBOOK 912 $a9910779883603321 996 $aFrontiers in electronics$91929454 997 $aUNINA