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200 00$aGaAs high breakdown voltage front and back side processed Schottky detectors for x-ray detection$b[electronic resource] /$fFred Semendy ... [and others]
210  1$aAdelphi, MD :$cArmy Research Laboratory,$d[2007]
215   $aiv, 13 pages $cdigital, PDF file
225 1 $aARL-TR ;$v4308
300   $aTitle from title screen (viewed March 5, 2009).
300   $a"November 2007."
320   $aIncludes bibliographical references (pages 10-11).
606   $aSemiconductors
606   $aSilicon carbide$xElectric properties
606   $aGallium nitride$xElectric properties
615  0$aSemiconductors.
615  0$aSilicon carbide$xElectric properties.
615  0$aGallium nitride$xElectric properties.
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712 02$aU.S. Army Research Laboratory.
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