LEADER 00706nam0-2200253 --450 001 9910746800303321 005 20231018111810.0 010 $a847370018X 100 $a20231018d1976----kmuy0itay5050 ba 101 0 $aspa 102 $aES 105 $a 001yy 200 1 $a<>España imaginada de Americo Castro$fEugenio Asensio 210 $aBercelona$cEl Albir$d1976 215 $a198 p.$d18 cm 225 1 $a<>Albir universal$v1 700 1$aAsensio,$bEugenio$0131218 801 0$aIT$bUNINA$gREICAT$2UNIMARC 901 $aBK 912 $a9910746800303321 952 $aDFT F35 CASA/S 01$fFLFBC 959 $aFLFBC 996 $aEspaña imaginada de Americo Castro$93569630 997 $aUNINA LEADER 02954nam 2200613Ia 450 001 9910783151803321 005 20230617021506.0 010 $a1-280-51540-6 010 $a9786610515400 010 $a1-84544-400-0 035 $a(CKB)1000000000008949 035 $a(EBL)289883 035 $a(OCoLC)70747955 035 $a(SSID)ssj0000465599 035 $a(PQKBManifestationID)11301103 035 $a(PQKBTitleCode)TC0000465599 035 $a(PQKBWorkID)10457369 035 $a(PQKB)11515183 035 $a(MiAaPQ)EBC289883 035 $a(Au-PeEL)EBL289883 035 $a(CaPaEBR)ebr10064568 035 $a(CaONFJC)MIL51540 035 $a(EXLCZ)991000000000008949 100 $a20041014d2004 my 0 101 0 $aeng 135 $aur|n|---||||| 181 $ctxt 182 $cc 183 $acr 200 04$aThe economics audit$b[electronic resource] /$feditor, Gerald Vinten 210 $a[Bradford, England] $cEmerald Group Pub.$d2004 215 $a1 online resource (132 p.) 225 1 $aManagerial auditing journal ;$vv. 19, no. 6, 2004 300 $aDescription based upon print version of record. 311 $a0-86176-986-4 320 $aIncludes bibliographical references. 327 $aCONTENTS; EDITORIAL ADVISORY BOARD; Abstracts and keywords; Collaborative public administration Some lessons from the Israeli experience; Corporate social responsibility and structural change in financial services; Loan loss provisioning system in Bangladesh banking A critical analysis; Organizations and environmental crime Legal and economic perspectives; Law, economics and the environment A comparative study of environmental management systems; Research of Bulgarian companies' marketing effectiveness; An econometric analysis of some major manufacturing industries A case study 327 $aThe accounting and taxation relationship in Spanish listed firmsNews 330 $aPublic administration is incrementally moving on a reform track that leads from responsiveness to collaboration. Attempts to enrich the discussion on the current state of new managerialism in public administration and to explain why and how it makes progress towards higher levels of cooperation and collaboration with various social players such as the private sector, the third sector, and citizens. Argues that in the end this is a socially desirable trend with meaningful benefits that reach far beyond the important idea of responsiveness. The idea of "collaborative" administration thus challen 410 0$aManagerial auditing journal ;$vv. 19, no. 6. 606 $aAuditing 606 $aAccounting 615 0$aAuditing. 615 0$aAccounting. 676 $a657 676 $a657.45 701 $aVinten$b Gerald$0631135 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 906 $aBOOK 912 $a9910783151803321 996 $aThe economics audit$93699631 997 $aUNINA LEADER 05740nam 2200649 450 001 9910787025503321 005 20230803205526.0 010 $a3-03826-626-4 035 $a(CKB)3710000000251947 035 $a(EBL)1910939 035 $a(SSID)ssj0001388152 035 $a(PQKBManifestationID)12012402 035 $a(PQKBTitleCode)TC0001388152 035 $a(PQKBWorkID)11383563 035 $a(PQKB)11183159 035 $a(Au-PeEL)EBL1910939 035 $a(CaPaEBR)ebr10951269 035 $a(OCoLC)893677848 035 $a(MiAaPQ)EBC1910939 035 $a(EXLCZ)993710000000251947 100 $a20141016h20142014 uy 0 101 0 $aeng 135 $aurcnu|||||||| 181 $ctxt 182 $cc 183 $acr 200 10$aUltra clean processing of semiconductor surfaces XII $eselected, peer reviewed papers from the 12th International Symposium on Ultra Clean Processing of Semiconductor Surfaces (UCPSS) September 21-24, 2014, Brussels, Belgium /$fedited by Paul Mertens, Marc Meuris and Marc Heyns 210 1$aPfaffikon, Switzerland :$cTTP,$d2014. 210 2$aEnfield, New Hampshire :$cTrans Tech Publications Ltd,$d[date of distribution not identified] 210 4$d©2014 215 $a1 online resource (331 p.) 225 1 $aSolid State Phenomena,$x1662-7799 ;$vVolume 219 300 $aDescription based upon print version of record. 311 1 $a3-03835-242-X 320 $aIncludes bibliographical references at the end of each chapters and index. 327 $aUltra Clean Processing of Semiconductor Surfaces XII; Preface, Committee and Acknowledgement; Table of Contents; Chapter 1: Cleaning for FEOL Applications; Necessity of Cleaning and its Application in Future Memory Devices; Removal of Interfacial Layer in HfO2 Gate Stack by Post-Gate Cleaning Using NF3/NH3 Dry Cleaning Technique; Catalyst Assisted Low Temperature Pre Epitaxial Cleaning for Si and SiGe Surfaces; HF-Last Wet Clean in Combination with a Low Temperature GeH4-Assisted HCl In Situ Clean Prior to Si0.8Ge0.2-on-Si Epitaxial Growth 327 $aRetardation Phenomenon of Oxide Removal during the Formation of Dual Gate Oxide via PR-Mask Wet Etching Aluminum Reduction in SC1; Metal Removal Efficiency in Deep Submicron Trenches by Wet Chemicals; Impact of Surface Treatment of Si3N4 on Subsequent SiO2 Deposition; Operation of a New Electrolyzed Cell Using Boron Doped Diamond Electrodes ; Chapter 2: Cleaning for FEOL Applications: Beyond-Si Active Area; InGaAs (110) Surface Cleaning Using Atomic Hydrogen; Surface Chemistry of GaAs(100) and InAs(100) Etching with Tartaric Acid; Nanoscale Etching and Reoxidation of InAs 327 $aPassivation of In Sb(100) with 1-Eicosanethiol Self-Assembled Monolayers Cross-Contamination Risk Evaluation during Fabrication of III-V Devices in a Silicon Processing Environment; Surface Cleaning of Graphene by CO2 Cluster; Chapter 3: Wet Etching for FEOL Applications; Process Control Challenges of Wet Etching Large MEMS Si Cavities; Wet Etch Rate Behavior of Poly-Si in TMAH Solution at Various Ambient Gas Conditions; Advanced Monitoring of TMAH Solution; Effect of Dissolved Oxygen for Advanced Wet Processing; Watermark Formation on Bare Silicon: Impact of Illumination and Substrate Doping 327 $aSelective Nitride Etching with Phosphoric and Sulfuric Acid Mixtures Using a Single-Wafer Wet Processor Single Wafer Selective Silicon Nitride Removal with Phosphoric Acid and Steam; Pt Etching Method at Low Temperature Using Electrolyzed Sulfuric Acid Solution; Nickel Selective Etch for Contacts on Ge Based Devices; Chapter 4: Wet Processing of High Aspect Ratio Structures; Study of Wetting of Nanostructures Using Decoration by Etching; Impact of Electrostatic Effects on Wet Etching Phenomenon in Nanoscale Region; Freeze Drying of High Aspect Ratio Structures 327 $aChapter 5: Fluid Dynamics, Cleaning Mechanics Effect of DI-Water Dilution and Etchant Arm Movement on Spinning Type Wet Etch; Effect of Nozzle Distance and Fluid Flow Rate in Jet Spray Wafer Cleaning Process; Effects of Chamber Pressure on the Performance of CO2 Beam Cleaning; Physical Chemistry of Water Droplets in Wafer Cleaning with Low Water Use; Metal Etch in Advanced Immersion Tank with Precision Uniformity Using Agitation and Wafer Rotation; Novel Slurry Injection System for Improved Slurry Flow and Reduced Defects in CMP 327 $aEffect of Viscoelasticity of PVA Brush on Friction during Post-CMP Cleaning: A Guideline for Nodule Configuration 330 $aCollection of selected, peer reviewed papers from the 12th InternationalSymposium on Ultra Clean Processing of Semiconductor Surfaces (UCPSS), September 21-24, 2014, Brussels, Belgium. The 71 papers are grouped as follows: Chapter 1: Cleaning for FEOL Applications, Chapter 2: Cleaning for FEOL Applications: Beyond-Si Active Area, Chapter 3: Wet Etching for FEOL Applications, Chapter 4: Wet Processing of High Aspect Ratio Structures, Chapter 5: Fluid Dynamics, Cleaning Mechanics, Chapter 6: Photo Resist Performance and Rework, Chapter 7: Cleaning for BEOL Interconnect Applications, Chapter 8: C 410 0$aDiffusion and defect data.$nPt. B,$pSolid state phenomena ;$vVolume 219. 606 $aSemiconductors$vCongresses 615 0$aSemiconductors 676 $a621.38152 702 $aMertens$b Paul 702 $aMeuris$b Marc 702 $aHeyns$b Marc 712 12$aInternational Symposium on Ultra Clean Processing of Semiconductor Surfaces 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 906 $aBOOK 912 $a9910787025503321 996 $aUltra clean processing of semiconductor surfaces XII$93781921 997 $aUNINA