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100   $a20230920c2023uuuu  -u-         -
101 0 $aeng
135   $aurmn|---annan
181   $ctxt$2rdacontent
182   $cc$2rdamedia
183   $acr$2rdacarrier
200 00$aRecent Advances in III-Nitride Semiconductors
210   $cMDPI - Multidisciplinary Digital Publishing Institute$d2023
215   $a1 online resource (236 p.)
311 08$a3-0365-8625-3 
330   $aGallium nitride and related semiconductor materials enable a wide range of novel devices, some of which already improve our everyday life. Driven by vast consumer markets, the research and development of nitride semiconductor devices underwent tremendous growth worldwide. The Special Issue on "Recent Advances in III-Nitride Semiconductors" provides a forum for research monographs and professional titles in this area. The Special Issue presents the joint effort of 16 leading research groups, covering subjects including: the growth of GaN-based materials and micro/nanostructures; characterization of the materials and heterostructures;  GaN-based novel devices, including emission, detection and power devices; application and integration of other wide-bandgap materials and novel devices in novel electronics and photonics.
606   $aHistory of engineering & technology$2bicssc
606   $aTechnology: general issues$2bicssc
610   $aAlGaN
610   $aelectro-optics devices
610   $aepitaxy
610   $aGaN
610   $aheterostructures
610   $aInGaN
610   $amicro-electronics devices
610   $aNitrides
610   $aphotonic crystal and plasmonics
610   $aphotonic crystal enhanced light-matter interaction
610   $apower devices
610   $atunable devices
615  7$aHistory of engineering & technology
615  7$aTechnology: general issues
906   $aBOOK
912   $a9910743270503321
996   $aRecent Advances in III-Nitride Semiconductors$93560503
997   $aUNINA