LEADER 00922nam a22002411i 4500 001 991003916679707536 005 20040702112803.0 008 040802s1886 gw |||||||||||||||||ger 035 $ab13147328-39ule_inst 035 $aARCHE-109993$9ExL 040 $aBiblioteca Interfacoltà$bita$cA.t.i. Arché s.c.r.l. Pandora Sicilia s.r.l. 082 04$a928.4 100 1 $aBettelheim, Anton$0204667 245 10$aBeaumarchais :$beine biographie /$cvon Anton Bettelheim 260 $aFrankfur :$bRütten & Loening,$c1886 300 $aXI, 659 p. ;$c22 cm 600 14$aBeaumarchais, Pierre-Augustin :$cCaron de 907 $a.b13147328$b02-04-14$c05-08-04 912 $a991003916679707536 945 $aLE002 Fondo Giudici L 846$g1$i2002000334879$lle002$nC. 1$o-$pE0.00$q-$rn$so $t0$u0$v0$w0$x0$y.i13785308$z05-08-04 996 $aBeaumarchais$9310536 997 $aUNISALENTO 998 $ale002$b05-08-04$cm$da $e-$fger$ggw $h0$i1 LEADER 00791nam0-2200289 --450 001 9910742098603321 005 20230921113056.0 010 $a978-88-921-3049-4 020 $aIT$b2019-9475 100 $a20230921d2019----kmuy0itay5050 ba 101 0 $aita 102 $aIT 105 $a 001yy 200 1 $aDimensioni del diritto$fa cura di A. Andronico, T. Greco, F. Macioce 210 $aTorino$cGiappichelli$d2019 215 $aXVII, 468 p.$d23 cm 676 $a340.1$v23$zita 702 1$aGreco,$bTommaso 702 1$aAndronico,$bAlberto 702 1$aMacioce,$bFabio 801 0$aIT$bUNINA$gREICAT$2UNIMARC 901 $aBK 912 $a9910742098603321 952 $aXI H 163$b2021/74$fFGBC 959 $aFGBC 996 $aDimensioni del diritto$91570175 997 $aUNINA LEADER 04900nam 22005293 450 001 9911006724103321 005 20250604020324.0 010 $a9783036416328 010 $a3036416323 035 $a(MiAaPQ)EBC31648669 035 $a(Au-PeEL)EBL31648669 035 $a(CKB)34825776300041 035 $a(Exl-AI)31648669 035 $a(OCoLC)1455117384 035 $a(EXLCZ)9934825776300041 100 $a20240907d2024 uy 0 101 0 $aeng 135 $aurcnu|||||||| 181 $ctxt$2rdacontent 182 $cc$2rdamedia 183 $acr$2rdacarrier 200 10$aFormation of Solid-State Structures 205 $a1st ed. 210 1$aZurich :$cTrans Tech Publications, Limited,$d2024. 210 4$d©2024. 215 $a1 online resource (221 pages) 225 1 $aSolid State Phenomena,$x1662-9779 ;$vVolume 359 311 08$a9783036406329 311 08$a3036406328 327 $aIntro -- Formation of Solid-State Structures -- Preface -- Table of Contents -- Free-Standing 3C-SiC P-Type Doping by Al Ion Implantation -- TEM Investigation on High Dose Al Implanted 4H-SiC Epitaxial Layer -- Evolution of the Substitutional Fraction on Post-Implantation Annealing in Al/4H-SiC Systems -- Low Resistivity Aluminum Doped Layers Formed Using High Dose High Temperature Implants and Laser Annealing -- Improving HfO2 Thick Films for SiC Power Devices by Si, Y and La Doping -- Dopant Activation Comparison in Phosphorus and Nitrogen Implanted 4H-Silicon Carbide -- Transient-Enhanced Diffusion of Implanted Aluminum in 4H-SiC -- Calibration of Aluminum Ion Implantation Monte-Carlo Model for TCAD Simulations in 4H-SiC -- Prediction of Contact Resistance of 4H-SiC by Machine Learning Using Optical Microscope Images after Laser Doping -- The Effect of Nitrogen Plasma Treatment Process on Ohmic Contact Formation to N-Type 4H-SiC -- Ni/4H-SiC Ohmic Contact Formation Using Multipulse Nanosecond Laser Annealing -- Lift-Off Process for Patterning of a Sputter-Deposited Thick Metal Stack for High Temperature Applications on 4H-SiC -- Plasma Treatment after NiSi-Based Ohmic Contact Formation on 4H-SiC to Enhance Adhesion of Subsequent Backside Metallization -- Effect of Substrate Heating on Low Contact-Resistance Formation by Excimer Laser Doping for 4H-SiC -- Nickel Ohmic Contacts Formed on 4H-SiC by UV Laser Annealing -- Electrical and Structural Properties of Ohmic Contacts of SiC Diodes Fabricated on Thin Wafers -- Empirical Model of Low-Ohmic Nickel-Based Contact Formation on N-Type 4H-SiC Depending on Thermal Budget -- Low-Ohmic Nickel Contacts on N-Type 4H-SiC by Surface Roughness Dependent Laser Annealing Energy Density Optimization -- Long Term Reliability and Deterioration Mechanisms of High-Temperature Metal Stacks on 4H-SiC. 327 $aMetal Contact Processing Experiments towards Realizing 500 °C Durable RF 4H-SiC BJTs -- Performance Improvement by Carbon-Dioxide Supercritical Fluid Treatment for 4H-SiC Vertical Double Diffusion MOSFETs -- Hydrogen Etching Process of 4H-SiC (0001) in Limited Regions -- Comparative Study of the Self-Aligned Channel Processes for 4H-SiC VDMOSFET -- Demonstration of Low Interface Trap Density (~3×1011eV-1cm-2) SiC/SiO2 MOS Capacitor with Excellent Performance Using H2+NO POA Treatment for SiC Power Devices -- Increasing Mobility in 4H-SiC MOSFETs with Deposited Oxide by In-Situ Nitridation of SiC Surface -- Demonstrating SiC In Situ Rounded Trench Processing Technologies for Future Power Trench MOSFET Applications -- High Mobility 4H-SiC P-MOSFET via Ultrathin ALD B2O3 Interlayer between SiC and SiO2 -- Quality Improvement of SiC Substrate Surface with Using Non-Abrasive CMP Slurry -- Addition of Transition Metal Ion CMP Slurry for Forming Ultra-Flat SiC Crystal -- Increasing 4H-SiC Trench Depth by Improving the Dry Etch Selectivity towards the Oxide Hard Mask -- A Comparison between Different Post Grinding Processes on 4H-SiC Wafers -- Influence of Active Area Etching Method on the Integrity of Gate Oxide on 4H-SiC -- High-K Gate Dielectric for High-Performance SiC Power MOSFET Technology with Low Interface Trap Density, Good Oxide Lifetime (ttddb? 104s), and High Thermal Stability (? 800 °C) -- Keyword Index -- Author Index. 330 $aSpecial topic volume with invited peer-reviewed papers only. 410 0$aDiffusion and defect data$nPt. B,$pSolid state phenomena ;$vVolume 359 606 $aSemiconductors$7Generated by AI 606 $aSolid state physics$7Generated by AI 615 0$aSemiconductors 615 0$aSolid state physics 700 $aRiccio$b Michele$01822804 701 $aIrace$b Andrea$0515880 701 $aBreglio$b Giovanni$01822805 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 906 $aBOOK 912 $a9911006724103321 996 $aFormation of Solid-State Structures$94389301 997 $aUNINA