LEADER 03654nam 2200625Ia 450 001 9910739414803321 005 20200520144314.0 010 $a94-007-6392-1 024 7 $a10.1007/978-94-007-6392-0 035 $a(CKB)2670000000372379 035 $a(EBL)1698401 035 $a(OCoLC)841944798 035 $a(SSID)ssj0000908281 035 $a(PQKBManifestationID)11470735 035 $a(PQKBTitleCode)TC0000908281 035 $a(PQKBWorkID)10901325 035 $a(PQKB)11024840 035 $a(DE-He213)978-94-007-6392-0 035 $a(MiAaPQ)EBC1698401 035 $a(PPN)169142566 035 $a(EXLCZ)992670000000372379 100 $a20130215d2013 uy 0 101 0 $aeng 135 $aur|n|---||||| 181 $ctxt 182 $cc 183 $acr 200 10$aPhoto-excited charge collection spectroscopy $eprobing the traps in field-effect transistors /$fSeongil Im, Youn-Gyoung Chang, Jae Hoon Kim 205 $a1st ed. 2013. 210 $aDordrecht $cSpringer$d2013 215 $a1 online resource (107 p.) 225 1 $aSpringer briefs in physics 300 $aDescription based upon print version of record. 311 $a94-007-6391-3 320 $aIncludes bibliographical references and index. 327 $aChapter 1 Device Stability and Photo-Excited Charge-Collection Spectroscopy -- Chapter 2 Instrumentations for PECCS -- Chapter 3 PECCS measurements in Organic FETs -- Chapter 4 PECCS measurements in Oxide FETs -- Chapter 5 PECCS measurements in Nanostructure FETs -- Chapter 6 Summary and limiting factors of PECCS. 330 $aSolid state field-effect devices such as organic and inorganic-channel thin-film transistors (TFTs) have been expected to promote advances in display and sensor electronics. The operational stabilities of such TFTs are thus important, strongly depending on the nature and density of charge traps present at the channel/dielectric interface or in the thin-film channel itself. This book contains how to characterize these traps, starting from the device physics of field-effect transistor (FET). Unlike conventional analysis techniques which are away from well-resolving spectral results, newly-introduced photo-excited charge-collection spectroscopy (PECCS) utilizes the photo-induced threshold voltage response from any type of working transistor devices with organic-, inorganic-, and even nano-channels, directly probing on the traps. So, our technique PECCS has been discussed through more than ten refereed-journal papers in the fields of device electronics, applied physics, applied chemistry, nano-devices and materials science, finally finding a need to be summarized with several chapters in a short book. Device physics and instrumentations of PECCS are well addressed respectively, in the first and second chapters, for the next chapters addressing real applications to organic, oxide, and nanostructured FETs. This book would provide benefits since its contents are not only educational and basic principle-supportive but also applicable and in-house operational. 410 0$aSpringerBriefs in physics. 606 $aSpectroscopy 606 $aSpectrum analysis 615 0$aSpectroscopy. 615 0$aSpectrum analysis. 676 $a621.3815 676 $a621.3815/284 676 $a621.3815284 700 $aIm$b Seongil$01424047 701 $aChang$b Youn-Gyoung$01763046 701 $aKim$b Jae H$g(Jae Hoon)$01763047 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 906 $aBOOK 912 $a9910739414803321 996 $aPhoto-excited charge collection spectroscopy$94203294 997 $aUNINA