LEADER 04452nam 22006975 450 001 9910731478903321 005 20251009075147.0 010 $a981-19-6246-4 024 7 $a10.1007/978-981-19-6246-2 035 $a(CKB)26946491700041 035 $a(MiAaPQ)EBC30593524 035 $a(Au-PeEL)EBL30593524 035 $a(DE-He213)978-981-19-6246-2 035 $a(PPN)272262870 035 $a(EXLCZ)9926946491700041 100 $a20230613d2023 u| 0 101 0 $aeng 135 $aurcnu|||||||| 181 $ctxt$2rdacontent 182 $cc$2rdamedia 183 $acr$2rdacarrier 200 10$aMultilayer Magnetic Nanostructures $eProperties and Applications /$fby Alexander S. Sigov 205 $a1st ed. 2023. 210 1$aSingapore :$cSpringer Nature Singapore :$cImprint: Springer,$d2023. 215 $a1 online resource (147 pages) 225 1 $aSpringer Aerospace Technology,$x1869-1749 311 08$a9789811962455 327 $aIntroduction -- Chapter 1. Physical basis of the appearance of magnetic nanostructures -- Chapter 2. Frustrations of exchange interaction -- Chapter 3. Domain walls and phase diagram of a spin-valve system with a non-magnetic layer -- Chapter 4. A thin film of a ferromagnet on an antiferromagnetic substrate. Uncompensated section -- Chapter 5. Compensated cross-section -- Chapter 6. Behavior in a magnetic field -- Chapter 7. Spin-valve structure ferromagnet-antiferromagnet-ferromagnet -- Chapter 8. Surface spin-flop transition in antiferromagnet -- Conclusion. 330 $aThis book presents relevant issues for the development of computer technology in general and civil aviation in particular, related to the promising task of developing magnetoresistive memory. In modern conditions of constantly increasing air traffic intensity, it is necessary to use both on board the aircraft and in ground services computing devices that guarantee the required level of flight safety. The book shows that in the multilayer ferromagnet-antiferromagnet system, the behavior of magnetic parameters in layers of nanometer thickness is largely determined by frustrations. The monograph provides not only a complete analysis of the current state of magnetic nanostructures but also predicts new types generated by exchange interaction frustrations. The phase diagrams "layer thickness (layers)?roughness" of a thin ferromagnetic film on an antiferromagnetic substrate and a spin-valve system ferromagnet-antiferromagnet-ferromagnet are constructed taking into account the energy of single-ion anisotropy. The book presents experimental results that confirm the existence of a new type of domain walls. It is shown that the detected domain walls appear exactly at the locations of the atomic steps, and their thickness increases in proportion to the film thickness with a proportionality coefficient of the order of one. Special attention using mathematical models is placed for optimal orientation of spins at a smooth interface in the case of a compensated cross section of an antiferromagnet and an uncompensated cross section. The constructed phase diagrams and models are compared with the experiments. It is thus concluded that scanning tunneling microscopy (STM) makes it possible to study domain walls generated by frustration on the surface of the structure. 410 0$aSpringer Aerospace Technology,$x1869-1749 606 $aCondensed matter 606 $aMagnetic materials 606 $aAerospace engineering 606 $aAstronautics 606 $aMaterials$xMicroscopy 606 $aSolid state physics 606 $aCondensed Matter Physics 606 $aMagnetic Materials 606 $aAerospace Technology and Astronautics 606 $aMicroscopy 606 $aElectronic Devices 615 0$aCondensed matter. 615 0$aMagnetic materials. 615 0$aAerospace engineering. 615 0$aAstronautics. 615 0$aMaterials$xMicroscopy. 615 0$aSolid state physics. 615 14$aCondensed Matter Physics. 615 24$aMagnetic Materials. 615 24$aAerospace Technology and Astronautics. 615 24$aMicroscopy. 615 24$aElectronic Devices. 676 $a620.11597 700 $aSigov$b Alexander S$01368886 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 906 $aBOOK 912 $a9910731478903321 996 $aMultilayer Magnetic Nanostructures$93394879 997 $aUNINA