LEADER 01512oam 2200469 450 001 9910714065503321 005 20201109132434.0 035 $a(CKB)5470000002506990 035 $a(OCoLC)762152747 035 $a(EXLCZ)995470000002506990 100 $a20111122j196810 ua 0 101 0 $aeng 135 $aur||||||||||| 181 $ctxt$2rdacontent 182 $cc$2rdamedia 183 $acr$2rdacarrier 200 10$aProton-produced defects in n-type silicon /$fby Roger A. Breckenridge 210 1$aWashington, D.C. :$cNational Aeronautics and Space Administration,$dOctober 1968. 215 $a1 online resource (26 pages) $cillustrations 225 1 $aNASA technical note ;$vTN D-4830 300 $a"October 1968." 320 $aIncludes bibliographical references (page 15). 606 $aSemiconductors$xEffect of radiation on 606 $aSilicon 606 $aSemiconductors$xEffect of radiation on$2fast 606 $aSilicon$2fast 615 0$aSemiconductors$xEffect of radiation on. 615 0$aSilicon. 615 7$aSemiconductors$xEffect of radiation on. 615 7$aSilicon. 700 $aBreckenridge$b Roger A.$01408825 712 02$aUnited States.$bNational Aeronautics and Space Administration, 801 0$bOCLCE 801 1$bOCLCE 801 2$bOCLCQ 801 2$bOCLCF 801 2$bOCLCQ 801 2$bGPO 906 $aBOOK 912 $a9910714065503321 996 $aProton-produced defects in n-type silicon$93493704 997 $aUNINA