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001 9910713911303321
005 20201211083521.0
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035   $a(EXLCZ)995470000002506554
100   $a20111115j196904    ua             0
101 0 $aeng
135   $aur|||||||||||
181   $ctxt$2rdacontent
182   $cc$2rdamedia
183   $acr$2rdacarrier
200 10$aAnnealing of 22-, 40-, and 158-MeV proton damage in n- and p-type silicon /$fby Marvin E. Beatty III and Gerald F. Hill
210  1$aWashington, D.C. :$cNational Aeronautics and Space Administration,$dApril 1969.
215   $a1 online resource (25 pages) $cillustrations
225 1 $aNASA technical note ;$vNASA TN D-5119
300   $a"April 1969."
320   $aIncludes bibliographical references (page 11).
606   $aSolar cells$xMaterials$xEffect of radiation on
606   $aSolar cells$xMaterials$xDefects
606   $aExtraterrestrial radiation
606   $aSilicon$xHeat treatment
606   $aExtraterrestrial radiation$2fast
606   $aSilicon$xEffect of radiation on$2fast
606   $aSilicon$xHeat treatment$2fast
615  0$aSolar cells$xMaterials$xEffect of radiation on.
615  0$aSolar cells$xMaterials$xDefects.
615  0$aExtraterrestrial radiation.
615  0$aSilicon$xHeat treatment.
615  7$aExtraterrestrial radiation.
615  7$aSilicon$xEffect of radiation on.
615  7$aSilicon$xHeat treatment.
700   $aBeatty$b Marvin E.$01394464
702   $aHill$b Gerald F.
712 02$aUnited States.$bNational Aeronautics and Space Administration,
712 02$aLangley Research Center.
801  0$bOCLCE
801  1$bOCLCE
801  2$bOCLCQ
801  2$bOCLCF
801  2$bCOP
801  2$bGPO
906   $aBOOK
912   $a9910713911303321
996   $aAnnealing of 22-, 40-, and 158-MeV proton damage in n- and p-type silicon$93451906
997   $aUNINA