LEADER 01484nam  2200421I  450 
001 9910711565803321
005 20181102102252.0
035   $a(CKB)5470000002484392
035   $a(OCoLC)1060610414
035   $a(EXLCZ)995470000002484392
100   $a20181102j201810    ua             0
101 0 $aeng
135   $aur|||||||||||
181   $ctxt$2rdacontent
182   $cc$2rdamedia
183   $acr$2rdacarrier
200 10$aCryogenic parametric characterization of gallium nitride switches /$fMarcelo C. Gonzalez, Lee W. Kohlman, and Andrew J. Trunek
210  1$aCleveland, Ohio :$cNational Aeronautics and Space Administration, Glenn Research Center,$dOctober 2018.
215   $a1 online resource (iii, 26 pages) $ccolor illustrations
225 1 $aNASA/TP ;$v2018-219973
300   $a"October 2018."
320   $aIncludes bibliographical references (page 26).
606   $aField effect transistors$2nasat
606   $aGallium nitrides$2nasat
606   $aMetal oxide semiconductors$2nasat
615  7$aField effect transistors.
615  7$aGallium nitrides.
615  7$aMetal oxide semiconductors.
700   $aGonzalez$b Marcelo C.$01412968
702   $aKohlman$b Lee W.
702   $aTrunek$b Andrew J.
712 02$aNASA Glenn Research Center,
801  0$bGPO
801  1$bGPO
906   $aBOOK
912   $a9910711565803321
996   $aCryogenic parametric characterization of gallium nitride switches$93508196
997   $aUNINA