LEADER 01497aam  2200409I  450 
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005 20160205080659.0
024 8 $aGOVPUB-C13-c3e33218fd8ad7d006b68b3b631fe898
035   $a(CKB)5470000002482126
035   $a(OCoLC)936670859
035   $a(EXLCZ)995470000002482126
100   $a20160205d1973      ua             0
101 0 $aeng
181   $2rdacontent
182   $2rdamedia
183   $2rdacarrier
200 10$aOptical radiation measurements $eStability and temperature characteristics of some silicon and selenium photodetectors /$fKshitij Mohan, A. Russell Schaefer, Edward F. Zalewski
210  1$aGaithersburg, MD :$cU.S. Dept. of Commerce, National Institute of Standards and Technology,$d1973.
215   $a1 online resource
225 1 $aNBS technical note ;$v594-5
300   $a1973.
300   $aContributed record: Metadata reviewed, not verified. Some fields updated by batch processes.
300   $aTitle from PDF title page.
320   $aIncludes bibliographical references.
517   $aOptical radiation measurements 
700   $aMohan$b Kshitij$01399773
701   $aMohan$b Kshitij$01399773
701   $aSchaefer$b A. Russell$01399774
701   $aZalewski$b Edward F$01394350
712 02$aUnited States.$bNational Bureau of Standards.
801  0$bNBS
801  1$bNBS
801  2$bGPO
906   $aBOOK
912   $a9910711390103321
996   $aOptical radiation measurements$93465653
997   $aUNINA