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005 20151030113009.0
024 8 $aGOVPUB-C13-7c41f838eac8f197249a5b6405317d3a
035   $a(CKB)5470000002480095
035   $a(OCoLC)927169879
035   $a(EXLCZ)995470000002480095
100   $a20151030d1997      ua             0
101 0 $aeng
181   $2rdacontent
182   $2rdamedia
183   $2rdacarrier
200 10$aSemiconductor measurement technology $ethe results of an interlaboratory study of ellipsometric measurements of thin film silicon dioxide on silicon /$fBarbara J. Belzer, David L. Blackburn
210  1$aGaithersburg, MD :$cU.S. Dept. of Commerce, National Institute of Standards and Technology,$d1997.
215   $a1 online resource
225 1 $aNIST special publication ;$v400-99
300   $a1997.
300   $aContributed record: Metadata reviewed, not verified. Some fields updated by batch processes.
300   $aTitle from PDF title page.
320   $aIncludes bibliographical references.
517   $aSemiconductor measurement technology 
700   $aBelzer$b Barbara J$01410394
701   $aBelzer$b Barbara J$01410394
701   $aBlackburn$b David L$01410395
712 02$aNational Institute of Standards and Technology (U.S.)
801  0$bNBS
801  1$bNBS
801  2$bGPO
906   $aBOOK
912   $a9910711191203321
996   $aSemiconductor measurement technology$93533289
997   $aUNINA