LEADER 01444aam  2200397I  450 
001 9910710513603321
005 20160705110709.0
024 8 $aGOVPUB-C13-8b788d30414a0dec47219eb965f61c3d
035   $a(CKB)5470000002478165
035   $a(OCoLC)953032922
035   $a(EXLCZ)995470000002478165
100   $a20160705d1989      ua             0
101 0 $aeng
181   $2rdacontent
182   $2rdamedia
183   $2rdacarrier
200 10$aImproved low-level silicon-avalanche-photodiode transfer standards at 1.064 micrometers /$fA. L. Rasmussen; P. A. Simpson; A. A. Sanders
210  1$aGaithersburg, MD :$cU.S. Dept. of Commerce, National Institute of Standards and Technology,$d1989.
215   $a1 online resource
225 1 $aNISTIR ;$v89-3917
300   $a1989.
300   $aContributed record: Metadata reviewed, not verified. Some fields updated by batch processes.
300   $aTitle from PDF title page.
320   $aIncludes bibliographical references.
700   $aRasmussen$b A. L$01390702
701   $aRasmussen$b A. L$01390702
701   $aSanders$b A. A$01390703
712 02$aSimpson (Pa.)
712 02$aNational Institute of Standards and Technology (U.S.)
801  0$bNBS
801  1$bNBS
801  2$bGPO
906   $aBOOK
912   $a9910710513603321
996   $aImproved low-level silicon-avalanche-photodiode transfer standards at 1.064 micrometers$93498927
997   $aUNINA