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024 8 $aGOVPUB-C13-f17c647f665d9be4ce74e5326def8499
035   $a(CKB)5470000002476733
035   $a(OCoLC)935501284
035   $a(EXLCZ)995470000002476733
100   $a20160121d1982      ua             0
101 0 $aeng
181   $2rdacontent
182   $2rdamedia
183   $2rdacarrier
200 10$aMeasurement techniques for high power semiconductor materials and devices $eannual report, October 1, 1980 to December 31, 1981 /$fW. R. Thurber; W. E. Phillips; R. D. Larrabee
210  1$aGaithersburg, MD :$cU.S. Dept. of Commerce, National Institute of Standards and Technology,$d1982.
215   $a1 online resource
225 1 $aNBSIR ;$v82-2552
300   $a1982.
300   $aContributed record: Metadata reviewed, not verified. Some fields updated by batch processes.
300   $aTitle from PDF title page.
320   $aIncludes bibliographical references.
517   $aMeasurement techniques for high power semiconductor materials and devices
700   $aThurber$b W. Robert$01390342
701   $aLarrabee$b R. D$01395132
701   $aPhillips$b W. E$01390344
701   $aThurber$b W. Robert$01390342
712 02$aUnited States.$bNational Bureau of Standards.
801  0$bNBS
801  1$bNBS
801  2$bGPO
906   $aBOOK
912   $a9910710255303321
996   $aMeasurement techniques for high power semiconductor materials and devices$93538365
997   $aUNINA