LEADER 01510aam  2200397I  450 
001 9910710232003321
005 20160309011335.0
024 8 $aGOVPUB-C13-3bd336431a31b38dad2abeab3018ee8c
035   $a(CKB)5470000002476969
035   $a(OCoLC)944188024
035   $a(EXLCZ)995470000002476969
100   $a20160309d1980      ua             0
101 0 $aeng
181   $2rdacontent
182   $2rdamedia
183   $2rdacarrier
200 10$aMeasurement techniques for high power semiconductor materials and devices $eannual report, October 1, 1978 to September 30, 1979 /$fF. F. Oettinger; R. D. Larrabee
210  1$aGaithersburg, MD :$cU.S. Dept. of Commerce, National Institute of Standards and Technology,$d1980.
215   $a1 online resource
225 1 $aNBSIR ;$v80-2061
300   $a1980.
300   $aContributed record: Metadata reviewed, not verified. Some fields updated by batch processes.
300   $aTitle from PDF title page.
320   $aIncludes bibliographical references.
517   $aMeasurement techniques for high power semiconductor materials and devices 
700   $aOettinger$b F. F$01386490
701   $aLarrabee$b R. D$01395132
701   $aOettinger$b F. F$01386490
712 02$aUnited States.$bNational Bureau of Standards.
801  0$bNBS
801  1$bNBS
801  2$bGPO
906   $aBOOK
912   $a9910710232003321
996   $aMeasurement techniques for high power semiconductor materials and devices$93473636
997   $aUNINA