LEADER 01437aam  2200385I  450 
001 9910710202503321
005 20160318082758.0
024 8 $aGOVPUB-C13-ddb5e0330f0034be763b3bc906662818
035   $a(CKB)5470000002477267
035   $a(OCoLC)945071106
035   $a(EXLCZ)995470000002477267
100   $a20160318d1983      ua             0
101 0 $aeng
181   $2rdacontent
182   $2rdamedia
183   $2rdacarrier
200 10$aMeasurement techniques for high-resistivity detector-grade silicon $eprogress report, July 1, 1982 to June 30, 1983 /$fR. D. Larrabee; J. R. Lowney
210  1$aGaithersburg, MD :$cU.S. Dept. of Commerce, National Institute of Standards and Technology,$d1983.
215   $a1 online resource
225 1 $aNBSIR ;$v83-2792
300   $a1983.
300   $aContributed record: Metadata reviewed, not verified. Some fields updated by batch processes.
300   $aTitle from PDF title page.
320   $aIncludes bibliographical references.
517   $aMeasurement techniques for high-resistivity detector-grade silicon 
700   $aLarrabee$b R. D$01395132
701   $aLarrabee$b R. D$01395132
712 02$aUnited States.$bNational Bureau of Standards.
801  0$bNBS
801  1$bNBS
801  2$bGPO
906   $aBOOK
912   $a9910710202503321
996   $aMeasurement techniques for high-resistivity detector-grade silicon$93532762
997   $aUNINA