LEADER 01394aam  2200397I  450 
001 9910710101003321
005 20151118015318.0
024 8 $aGOVPUB-C13-a871a223be92b4bc58f246b19bd2b288
035   $a(CKB)5470000002475262
035   $a(OCoLC)929879609
035   $a(EXLCZ)995470000002475262
100   $a20151118d1973      ua             0
101 0 $aeng
181   $2rdacontent
182   $2rdamedia
183   $2rdacarrier
200 10$aResistivity and carrier lifetime in gold-doped silicon /$fW. Robert Thurber; David C. Lewis; W. Murray Bullis
210  1$aGaithersburg, MD :$cU.S. Dept. of Commerce, National Institute of Standards and Technology,$d1973.
215   $a1 online resource
225 1 $aNBSIR ;$v73-128
300   $a1973.
300   $aContributed record: Metadata reviewed, not verified. Some fields updated by batch processes.
300   $aTitle from PDF title page.
320   $aIncludes bibliographical references.
700   $aThurber$b W. Robert$01390342
701   $aBullis$b W. Murray$01387657
701   $aLewis$b David C$0142682
701   $aThurber$b W. Robert$01390342
712 02$aUnited States.$bNational Bureau of Standards.
801  0$bNBS
801  1$bNBS
801  2$bGPO
906   $aBOOK
912   $a9910710101003321
996   $aResistivity and carrier lifetime in gold-doped silicon$93499809
997   $aUNINA