LEADER 01501nam  2200457   450 
001 9910709974503321
005 20180824101048.0
035   $a(CKB)5470000002474519
035   $a(OCoLC)1049711998
035   $a(EXLCZ)995470000002474519
100   $a20180824j198201    ua             0
101 0 $aeng
135   $aur|||||||||||
181   $ctxt$2rdacontent
182   $cc$2rdamedia
183   $acr$2rdacarrier
200 10$aCharacterization of silicon-gate CMOS/SOS integrated circuits processed with ion implantation /$fD.S. Woo
210  1$aMarshall Space Flight Center, AL :$cGeorge C. Marshall Space Flight Center,$dJanuary 1982.
215   $a1 online resource (v, 12 pages, 1 unnumbered page) $cillustrations
225 1 $aNASA/CR ;$v161988
300   $a"January 1982."
320   $aIncludes bibliographical reference (page 11).
606   $aComputer aided design$2nasat
606   $aCoding$2nasat
606   $aIon implantation$2nasat
606   $aMasks$2nasat
606   $aElectron beams$2nasat
615  7$aComputer aided design.
615  7$aCoding.
615  7$aIon implantation.
615  7$aMasks.
615  7$aElectron beams.
700   $aWoo$b D. S.$01392910
712 02$aGeorge C. Marshall Space Flight Center,
712 02$aSolid State Technology Center (RCA Corporation)
801  0$bGPO
801  1$bGPO
906   $aBOOK
912   $a9910709974503321
996   $aCharacterization of silicon-gate CMOS$93448436
997   $aUNINA