LEADER 02150nam  2200541Ia 450 
001 9910709939003321
005 20180711120936.0
024 8 $aGOVPUB-C13-752d1bed8ba5e339a5dbbbe7614cc375
035   $a(CKB)5470000002474878
035   $a(OCoLC)123128229
035   $a(OCoLC)995470000002474878
035   $a(EXLCZ)995470000002474878
100   $a20070416d2006      ua             0
101 0 $aeng
135   $aurcn|||||||||
181   $ctxt$2rdacontent
182   $cc$2rdamedia
183   $acr$2rdacarrier
200 00$aImplementation of simulation program for modeling the effective resistivity of nanometer scale film and line interconnects /$fA. Emre Yarimbiyik [and others]
210  1$a[Gaithersburg, MD] :$cU.S. Dept. of Commerce, National Institute of Standards and Technology,$d[2006].
215   $a1 online resource (21 unnumbered pages) $cillustrations
225 1 $aNISTIR ;$v7234
300   $a"February 2006."
300   $aContributed record: Metadata reviewed, not verified. Some fields updated by batch processes.
300   $aTitle from page [1], viewed March 7, 2007.
320   $aIncludes bibliographical references.
606   $aNanoelectromechanical systems
606   $aThin films$xSize effects$xComputer simulation
606   $aNanoelectromechanical systems$2fast
615  0$aNanoelectromechanical systems.
615  0$aThin films$xSize effects$xComputer simulation.
615  7$aNanoelectromechanical systems.
701   $aAllen$b Ricky$01421995
701   $aBlackburn$b David L$01410395
701   $aSchafft$b Harry A$01388971
701   $aYarimbiyik$b A. Emre$01421996
701   $aZaghloul$b M. E$g(Mona Elwakkad)$01419255
712 02$aNational Institute of Standards and Technology (U.S.).$bSemiconductor Electronics Division.
801  0$bNBS
801  1$bNBS
801  2$bOCLCQ
801  2$bOCLCO
801  2$bOCLCQ
801  2$bOCLCF
906   $aBOOK
912   $a9910709939003321
996   $aImplementation of simulation program for modeling the effective resistivity of nanometer scale film and line interconnects$93544980
997   $aUNINA