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024 8 $aGOVPUB-C13-c89de5cbcf7c7bfbd55c648ac515c70d
035   $a(CKB)5470000002475168
035   $a(OCoLC)929879279
035   $a(EXLCZ)995470000002475168
100   $a20151118d1979      ua             0
101 0 $aeng
181   $2rdacontent
182   $2rdamedia
183   $2rdacarrier
200 10$aDevelopment of hydrogen and hydroxyl contamination in thin silicon dioxide thermal films /$fSantos Mayo; William H. Evans
210  1$aGaithersburg, MD :$cU.S. Dept. of Commerce, National Institute of Standards and Technology,$d1979.
215   $a1 online resource
225 1 $aNBSIR ;$v78-1558
300   $a1979.
300   $aContributed record: Metadata reviewed, not verified. Some fields updated by batch processes.
300   $aTitle from PDF title page.
320   $aIncludes bibliographical references.
700   $aMayo$b Santos$01407760
701   $aEvans$b William H$01407761
701   $aMayo$b Santos$01407760
712 02$aUnited States.$bNational Bureau of Standards.
801  0$bNBS
801  1$bNBS
801  2$bGPO
906   $aBOOK
912   $a9910709910303321
996   $aDevelopment of hydrogen and hydroxyl contamination in thin silicon dioxide thermal films$93490031
997   $aUNINA