LEADER 02042nam  2200541   450 
001 9910707379303321
005 20160712143716.0
035   $a(CKB)5470000002463722
035   $a(OCoLC)953458740
035   $a(EXLCZ)995470000002463722
100   $a20160712j199606    ua             0
101 0 $aeng
135   $aurbn|||||||||
181   $ctxt$2rdacontent
182   $cc$2rdamedia
183   $acr$2rdacarrier
200 10$aElectronic and interfacial properties of Pd/6H-SiC Schottky diode gas sensors /$fLiang-Yu Chen [and seven others]
210  1$aCleveland, Ohio :$cNational Aeronautics and Space Administration, Lewis Research Center,$dJune 1996.
215   $a1 online resource (6 pages) $cillustrations
225 1 $aNASA technical memorandum ;$v107255
300   $aTitle from title screen (viewed July 11, 2016).
300   $a"June 1996"--Report documentation page.
300   $a"Prepared for the Third International High Temperature Electronics Conference sponsored by the Sandia National Laboratories, Albuquerque, New Mexico, 1996."
300   $a"Performing organization: National Aeronautics and Space Administration, Lewis Research Center"--Report documentation page.
320   $aIncludes bibliographical references (page 6).
606   $aGas detectors$2nasat
606   $aSchottky diodes$2nasat
606   $aHydrocarbons$2nasat
606   $aHydrogen$2nasat
606   $aPalladium$2nasat
606   $aSilicon carbides$2nasat
606   $aHeating$2nasat
615  7$aGas detectors.
615  7$aSchottky diodes.
615  7$aHydrocarbons.
615  7$aHydrogen.
615  7$aPalladium.
615  7$aSilicon carbides.
615  7$aHeating.
700   $aChen$b Liang Yu$01406921
712 02$aLewis Research Center,
712 02$aUnited States.$bNational Aeronautics and Space Administration,
801  0$bGPO
801  1$bGPO
906   $aBOOK
912   $a9910707379303321
996   $aElectronic and interfacial properties of Pd$93487045
997   $aUNINA