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100   $a20130912j199812    ua             0
101 0 $aeng
135   $aurbn||||a|a||
181   $ctxt$2rdacontent
182   $cc$2rdamedia
183   $acr$2rdacarrier
200 10$aImpact of radiation hardness and operating temperatures of silicon carbide electronics on space power system mass /$fAlbert J. Juhasz, Roy C. Tew, and Gene E. Schwarze
210  1$aCleveland, Ohio :$cNational Aeronautics and Space Administration, Lewis Research Center,$dDecember 1998.
215   $a1 online resource (6 pages) $cillustrations
225 1 $aNASA/TM ;$v1998-208826
300   $a"December 1998."
300   $a"Prepared for the Space Technology and Applications International Forum cosponsored by the Boeing Company, Lockheed Martin, National Aeronautics and Space Administration, U.S. Air Force, and the U.S. Department of Energy, Albuquerque, New Mexico, January 31-February 4, 1999."
300   $a"Performing organization: National Aeronautics and Space Administration, Lewis Research Center"--Report documentation page.
320   $aIncludes bibliographical references (page 6).
606   $aOperating temperature$2nasat
606   $aRadiation hardening$2nasat
606   $aSilicon carbides$2nasat
606   $aSpacecraft power supplies$2nasat
606   $aHeat radiators$2nasat
606   $aRadiation effects$2nasat
615  7$aOperating temperature.
615  7$aRadiation hardening.
615  7$aSilicon carbides.
615  7$aSpacecraft power supplies.
615  7$aHeat radiators.
615  7$aRadiation effects.
700   $aJuhasz$b Albert J.$01390072
702   $aTew$b Roy C.
702   $aSchwarze$b Gene E.
712 02$aLewis Research Center,
801  0$bOCLCE
801  1$bOCLCE
801  2$bOCLCO
801  2$bOCLCQ
801  2$bGPO
906   $aBOOK
912   $a9910706199003321
996   $aImpact of radiation hardness and operating temperatures of silicon carbide electronics on space power system mass$93462746
997   $aUNINA