LEADER 01849nam  2200517   450 
001 9910705874403321
005 20170725143054.0
035   $a(CKB)5470000002453671
035   $a(OCoLC)994303469
035   $a(EXLCZ)995470000002453671
100   $a20170724d1990      ua             0
101 0 $aeng
135   $aurbn|||||||||
181   $ctxt$2rdacontent
182   $cc$2rdamedia
183   $acr$2rdacarrier
200 10$aElectron beam induced damage in PECVD Si?N? and SiO? films on InP /$fDragan M. Pantie [and four others]
210  1$aCleveland, Ohio :$cNational Aeronautics and Space Administration, Lewis Research Center,$d[1990].
215   $a1 online resource (15 pages) $cillustrations
225 1 $aNASA technical memorandum ;$v102544
300   $a"Performing organization: National Aeronautics and Space Administration, Lewis Research Center"--Report documentation page.
320   $aIncludes bibliographical references (page 13).
606   $aCapacitance-voltage characteristics$2nasat
606   $aElectron beams$2nasat
606   $aIndium phosphides$2nasat
606   $aIrradiation$2nasat
606   $aPhosphorus$2nasat
606   $aPlasmas (physics)$2nasat
606   $aRadiation damage$2nasat
606   $aVapor deposition$2nasat
615  7$aCapacitance-voltage characteristics.
615  7$aElectron beams.
615  7$aIndium phosphides.
615  7$aIrradiation.
615  7$aPhosphorus.
615  7$aPlasmas (physics)
615  7$aRadiation damage.
615  7$aVapor deposition.
700   $aPantic$b Dragan M.$01414978
712 02$aLewis Research Center,
801  0$bGPO
801  1$bGPO
906   $aBOOK
912   $a9910705874403321
996   $aElectron beam induced damage in PECVD Si?N? and SiO? films on InP$93515740
997   $aUNINA