LEADER 01745oam  2200481I  450 
001 9910705765103321
005 20170619144447.0
035   $a(CKB)5470000002452755
035   $a(OCoLC)846209334
035   $a(EXLCZ)995470000002452755
100   $a20130602j199711    ua             0
101 0 $aeng
135   $aurbn|||||||||
181   $ctxt$2rdacontent
182   $cc$2rdamedia
183   $acr$2rdacarrier
200 10$aElectrodeposited CuInSe? thin film junctions /$fR.P. Raffaelle [and five others]
210  1$aCleveland, Ohio :$cNational Aeronautics and Space Administration, Lewis Research Center,$dNovember 1997.
215   $a1 online resource (6 pages) $cillustrations
225 1 $aNASA/TM ;$v97-206322
300   $a"November 1997."
300   $a"Prepared for the 1997 Fall Meeting sponsored by the Materials Research Society, Boston, Massachusetts, December 1-5, 1997."
300   $a"Performing organization: National Aeronautics and Space Administration Lewis Research Center"--Report documentation page.
320   $aIncludes bibliographical reference (page 6).
517 3 $aElectrodeposited copper indium diselenide thin film junctions
606   $aCopper indium selenides$2nasat
606   $aThin films$2nasat
606   $aElectrodeposition$2nasat
615  7$aCopper indium selenides.
615  7$aThin films.
615  7$aElectrodeposition.
700   $aRaffaelle$b R. P.$01418321
712 02$aLewis Research Center,
801  0$bOCLCE
801  1$bOCLCE
801  2$bOCLCQ
801  2$bOCLCO
801  2$bOCLCQ
801  2$bGPO
906   $aBOOK
912   $a9910705765103321
996   $aElectrodeposited CuInSe? thin film junctions$93529398
997   $aUNINA