LEADER 01556nam  2200469I  450 
001 9910703867603321
005 20150710161929.0
035   $a(CKB)5470000002435054
035   $a(OCoLC)913602265
035   $a(EXLCZ)995470000002435054
100   $a20150710j198805    ua             0
101 0 $aeng
135   $aurbn|||||||||
181   $ctxt$2rdacontent
182   $cc$2rdamedia
183   $acr$2rdacarrier
200 10$a20 GHz monolithic transmit modules /$fJ.A. Higgins, principal investigator
210  1$aThousand Oaks CA :$cRockwell International Science Center,$dMay 1988.
215   $a1 online resource (viii, 80, 5 pages, 7 unnumbered pages) $cillustrated
225 1 $aNASA CR ;$v182134
300   $aTitle from title screen (viewed on July 10, 2015).
300   $a"May 1988."
320   $aIncludes bibliographical references (page 79).
606   $aField effect transistors$2nasat
606   $aPhase shift circuits$2nasat
606   $aPower amplifiers$2nasat
606   $aGallium arsenides$2nasat
606   $aIon implantation$2nasat
615  7$aField effect transistors.
615  7$aPhase shift circuits.
615  7$aPower amplifiers.
615  7$aGallium arsenides.
615  7$aIon implantation.
700   $aHiggins$b J. A.$01417015
712 02$aRockwell International.$bScience Center,
712 02$aLewis Research Center,
801  0$bGPO
801  1$bGPO
906   $aBOOK
912   $a9910703867603321
996   $a20 GHz monolithic transmit modules$93524068
997   $aUNINA