LEADER 01787nam  2200445Ia 450 
001 9910703292403321
005 20110802142327.0
035   $a(CKB)4330000001829027
035   $a(OCoLC)744451982
035   $a(EXLCZ)994330000001829027
100   $a20110802d2011      ua             0
101 0 $aeng
135   $aurcn|||||||||
181   $ctxt$2rdacontent
182   $cc$2rdamedia
183   $acr$2rdacarrier
200 00$aEpitaxial crystal silicon absorber layers and solar cells grown at 1.8 microns per minute$b[electronic resource] $epreprint /$fDavid C. Bobela ... [and others]
210  1$a[Golden, Colo.] :$cNational Renewable Energy Laboratory,$d[2011]
215   $a1 online resource (4 pages) $cillustrations (some color)
225 1 $aNREL/CP ;$v5200-50708
300   $aTitle from title screen (viewed on Aug. 2, 2011).
300   $a"July 2011."
300   $a"Presented at the 37th IEEE Photovoltaic Specialists Conference (PVSC 37) Seattle, Washington, June 19-24, 2011."
320   $aIncludes bibliographical references (page 4).
517   $aEpitaxial Crystal Silicon Absorber Layers and Solar Cells Grown at 1.8 Microns per Minute 
606   $aSolar cells$xDesign and construction
606   $aEpitaxy
606   $aThin films
615  0$aSolar cells$xDesign and construction.
615  0$aEpitaxy.
615  0$aThin films.
701   $aBobela$b David C$01420545
712 02$aNational Renewable Energy Laboratory (U.S.)
712 12$aIEEE Photovoltaic Specialists Conference$d(37th :$f2011 :$eSeattle, Wash.)
801  0$bGPO
801  1$bGPO
906   $aBOOK
912   $a9910703292403321
996   $aEpitaxial crystal silicon absorber layers and solar cells grown at 1.8 microns per minute$93538846
997   $aUNINA