LEADER 02016nam  2200565Ia 450 
001 9910702249303321
005 20121107090327.0
035   $a(CKB)5470000002425656
035   $a(OCoLC)816311040
035   $a(EXLCZ)995470000002425656
100   $a20121107d2012      ua             0
101 0 $aeng
135   $aurmn|||||||||
181   $ctxt$2rdacontent
182   $cc$2rdamedia
183   $acr$2rdacarrier
200 00$aTransmission electron microscopy (TEM) sample preparation of Si[subscript 1-x]Ge[subscript x] in c-plane sapphire substrate$b[electronic resource] /$fHyun Jung Kim ... [and others]
210  1$aHampton, Va. :$cNational Aeronautics and Space Administration, Langley Research Center,$d[2012]
215   $a1 online resource (ix, 29 pages) $cillustrations (some color)
225 1 $aNASA/TM ;$v2012-217597
300   $aTitle from title screen (viewed on Nov. 7, 2012).
300   $a"August 2012."
320   $aIncludes bibliographical references (page 29).
517   $aTransmission electron microscopy 
606   $aIon beams$2nasat
606   $aSapphire$2nasat
606   $aTransmission electron microscopy$2nasat
606   $aX ray diffraction$2nasat
606   $aSingle crystals$2nasat
606   $aRhombohedrons$2nasat
606   $aGermanium$2nasat
606   $aDensity measurement$2nasat
606   $aCrystal structure$2nasat
615  7$aIon beams.
615  7$aSapphire.
615  7$aTransmission electron microscopy.
615  7$aX ray diffraction.
615  7$aSingle crystals.
615  7$aRhombohedrons.
615  7$aGermanium.
615  7$aDensity measurement.
615  7$aCrystal structure.
701   $aKim$b Hyo?n-jo?ng$01403869
712 02$aLangley Research Center.
801  0$bGPO
801  1$bGPO
906   $aBOOK
912   $a9910702249303321
996   $aTransmission electron microscopy (TEM) sample preparation of SiGesubscript x in c-plane sapphire substrate$93514720
997   $aUNINA