LEADER 01671oam  2200433 a 450 
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005 20121009115052.0
035   $a(CKB)5470000002425081
035   $a(OCoLC)812275777
035   $a(EXLCZ)995470000002425081
100   $a20121009d1983      ua             0
101 0 $aeng
135   $aurbn|||||||||
181   $ctxt$2rdacontent
182   $cc$2rdamedia
183   $acr$2rdacarrier
200 10$aSilicon carbide, a high temperature semiconductor$b[electronic resource] /$fJ. Anthony Powell
210  1$aCleveland, Ohio :$cNational Aeronautics and Space Administration, Lewis Research Center,$d[1983]
215   $a1 online resource (5 pages) $cillustrations
225 1 $aNASA technical memorandum ;$v83514
300   $aTitle from title screen (viewed Oct. 9, 2012).
300   $aPrepared for the Cleveland Electronic Conference (CECON '83) sponsored by the Institute of Electrical and Electrotics Engineers, Inc. Cleveland, Ohio, October 4-6, 1983.
320   $aIncludes bibliographical references (page 5).
606   $aHigh temperature environments$2nasat
606   $aSemiconductor devices$2nasat
606   $aSilicon carbides$2nasat
615  7$aHigh temperature environments.
615  7$aSemiconductor devices.
615  7$aSilicon carbides.
700   $aPowell$b J. Anthony$01422358
712 02$aLewis Research Center.
712 12$aCleveland Electrical/Electronics Conference and Exposition$f(1983)
801  0$bGPO
801  1$bGPO
801  2$bGPO
906   $aBOOK
912   $a9910702106203321
996   $aSilicon carbide, a high temperature semiconductor$93546434
997   $aUNINA