LEADER 01642oam 2200421Ia 450 001 9910700000203321 005 20110223114934.0 035 $a(CKB)5470000002405950 035 $a(OCoLC)227990191 035 $a(EXLCZ)995470000002405950 100 $a20080513d2002 ua 0 101 0 $aeng 135 $aurbn||||||||| 181 $ctxt$2rdacontent 182 $cc$2rdamedia 183 $acr$2rdacarrier 200 10$aDetermining extent of ion-exchange in various counterion nafion membranes using prompt gamma neutron activation analysis (PGAA)$b[electronic resource] /$fSandra K. Young ... [and others] 210 1$aAberdeen Proving Ground, MD :$cArmy Research Laboratory,$d[2002] 215 $a1 online resource (x, 24 pages) $cillustrations 225 1 $aARL-TR ;$v2679 300 $aTitle from PDF title screen (viewed on Feb. 23, 2011). 300 $a"March 2002." 320 $aIncludes bibliographical references (pages 17-19). 517 $aDetermining extent of ion-exchange in various counterion nafion membranes using prompt gamma neutron activation analysis 606 $aIon exchange$xMeasurement 606 $aMembranes (Technology) 615 0$aIon exchange$xMeasurement. 615 0$aMembranes (Technology) 700 $aYoung$b Sandra K$01404261 712 02$aU.S. Army Research Laboratory. 801 0$bDTICE 801 1$bDTICE 801 2$bOCLCQ 801 2$bGPO 906 $aBOOK 912 $a9910700000203321 996 $aDetermining extent of ion-exchange in various counterion nafion membranes using prompt gamma neutron activation analysis (PGAA)$93478575 997 $aUNINA LEADER 01213nam 2200361Ka 450 001 9910698127803321 005 20090527091011.0 035 $a(CKB)5470000002395705 035 $a(OCoLC)351632181 035 $a(EXLCZ)995470000002395705 100 $a20090526d2008 uy 0 101 0 $aeng 181 $ctxt$2rdacontent 182 $cc$2rdamedia 183 $acr$2rdacarrier 200 10$aDevelopment of gate and base drive using SiC junction field effect transistors$b[electronic resource] /$fby Timothy E. Griffin 210 1$aAdelphi, Md. :$cArmy Research Laboratory,$d[2008] 215 $aiv, 16 pages $cdigital, PDF file 225 1 $aARL-TR ;$v4475 300 $aTitle from title screen (viewed on May 26, 2009). 300 $a"May 2008." 606 $aField-effect transistors 606 $aJunction transistors 615 0$aField-effect transistors. 615 0$aJunction transistors. 700 $aGriffin$b Timothy E$01391748 712 02$aU.S. Army Research Laboratory. 801 0$bGPO 801 1$bGPO 906 $aBOOK 912 $a9910698127803321 996 $aDevelopment of gate and base drive using SiC junction field effect transistors$93483520 997 $aUNINA