LEADER 01616nam  2200421Ia 450 
001 9910699582803321
005 20230902161641.0
035   $a(CKB)5470000002403095
035   $a(OCoLC)688596560
035   $a(EXLCZ)995470000002403095
100   $a20101202d2003      ua             0
101 0 $aeng
135   $aurmn|||||||||
181   $ctxt$2rdacontent
182   $cc$2rdamedia
183   $acr$2rdacarrier
200 10$aUnderstanding transmission electron microscopy diffraction patterns obtained from infrared semiconductor materials$b[electronic resource] /$fby Wendy L. Sarney
210  1$aAdelphi, MD :$cArmy Research Laboratory,$d[2003]
215   $a1 online resource (iv, 17 pages) $ccolor illustrations
225 1 $aARL-TR ;$v3128
300   $aTitle from title screen (viewed on Dec. 1, 2010).
300   $a"December 2003."
320   $aIncludes bibliographical references.
410  0$aARL-TR (Aberdeen Proving Ground, Md.) ;$v3128.
606   $aDiffraction patterns$xAnalysis
606   $aSemiconductors$xMaterials$xStructure$xAnalysis
606   $aTransmission electron microscopes
615  0$aDiffraction patterns$xAnalysis.
615  0$aSemiconductors$xMaterials$xStructure$xAnalysis.
615  0$aTransmission electron microscopes.
700   $aSarney$b Wendy L$01385934
712 02$aU.S. Army Research Laboratory.
801  0$bGPO
801  1$bGPO
906   $aBOOK
912   $a9910699582803321
996   $aUnderstanding transmission electron microscopy diffraction patterns obtained from infrared semiconductor materials$93445708
997   $aUNINA