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035   $a(OCoLC)227908497
035   $a(EXLCZ)995470000002402524
100   $a20080513d2006      ua             0
101 0 $aeng
135   $aurmn|||||||||
181   $ctxt$2rdacontent
182   $cc$2rdamedia
183   $acr$2rdacarrier
200 10$aPulsed capacitance measurement of silicon carbide (SiC) Schottky diode and SiC metal oxide semiconductor$b[electronic resource] /$fby Timothy E. Griffin
210  1$aAdelphi, MD :$cArmy Research Laboratory,$d[2006]
215   $a1 online resource (vi, 22 pages) $cillustrations
225 1 $aARL-TR ;$v3993
300   $aTitle from PDF title screen (ARL, viewed Mar. 23, 2010).
300   $a"November 2006."
410  0$aARL-TR (Aberdeen Proving Ground, Md.) ;$v3993.
517   $aPulsed capacitance measurement of silicon carbide 
606   $aPulsed power systems
606   $aDiodes, Schottky-barrier
606   $aMetal oxide semiconductors
615  0$aPulsed power systems.
615  0$aDiodes, Schottky-barrier.
615  0$aMetal oxide semiconductors.
700   $aGriffin$b Timothy E$01391748
712 02$aU.S. Army Research Laboratory.
801  0$bDTICE
801  1$bDTICE
801  2$bGPO
906   $aBOOK
912   $a9910699339303321
996   $aPulsed capacitance measurement of silicon carbide (SiC) Schottky diode and SiC metal oxide semiconductor$93471624
997   $aUNINA