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035   $a(OCoLC)671240632
035   $a(EXLCZ)995470000002402777
100   $a20101020d2006      ua             0
101 0 $aeng
135   $aurbn|||||||||
181   $ctxt$2rdacontent
182   $cc$2rdamedia
183   $acr$2rdacarrier
200 10$aSwitching characteristics of a 4H-SiC based bipolar junction transistor to 200 °C$b[electronic resource] /$fJanis M. Niedra
210  1$aCleveland, Ohio :$cNational Aeronautics and Space Administration, Glenn Research Center,$d[2006]
215   $a1 online resource (6 pages) $cillustrations
225 1 $aNASA/CR- ;$v2006-214257
300   $aTitle from title screen (viewed on Oct. 20, 2010).
300   $a"November 2006."
410  0$aNASA contractor report ;$vNASA CR-214257.
606   $aJunction transistors$2nasat
606   $aHigh temperature$2nasat
606   $aBipolar transistors$2nasat
606   $aSwitching$2nasat
606   $aStatic loads$2nasat
606   $aElectric potential$2nasat
615  7$aJunction transistors.
615  7$aHigh temperature.
615  7$aBipolar transistors.
615  7$aSwitching.
615  7$aStatic loads.
615  7$aElectric potential.
700   $aNiedra$b Janis M$01389258
712 02$aNASA Glenn Research Center.
801  0$bGPO
801  1$bGPO
906   $aBOOK
912   $a9910699314303321
996   $aSwitching characteristics of a 4H-SiC based bipolar junction transistor to 200 °C$93541581
997   $aUNINA