LEADER 01578nam 2200469 a 450 001 9910699313603321 005 20230902161949.0 035 $a(CKB)5470000002402784 035 $a(OCoLC)671240534 035 $a(EXLCZ)995470000002402784 100 $a20101020d2006 ua 0 101 0 $aeng 135 $aurbn||||||||| 181 $ctxt$2rdacontent 182 $cc$2rdamedia 183 $acr$2rdacarrier 200 10$aFast turn-off times observed in experimental 4H SiC thyristors$b[electronic resource] /$fJanis M. Niedra 210 1$aCleveland, Ohio :$cNational Aeronautics and Space Administration, Glenn Research Center,$d[2006] 215 $a1 online resource (6 pages) $cillustrations 225 1 $aNASA/CR- ;$v2006-214259 300 $aTitle from title screen (viewed on Oct. 20, 2010). 300 $a"November 2006." 320 $aIncludes bibliographical references (page 3). 410 0$aNASA contractor report ;$vNASA CR-214259. 606 $aThyristors$2nasat 606 $aElectric potential$2nasat 606 $aCircuits$2nasat 606 $aTemperature measurement$2nasat 606 $aBypasses$2nasat 615 7$aThyristors. 615 7$aElectric potential. 615 7$aCircuits. 615 7$aTemperature measurement. 615 7$aBypasses. 700 $aNiedra$b Janis M$01389258 712 02$aNASA Glenn Research Center. 801 0$bGPO 801 1$bGPO 906 $aBOOK 912 $a9910699313603321 996 $aFast turn-off times observed in experimental 4H SiC thyristors$93440550 997 $aUNINA