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200 10$aDesign of Shallow p-type Dopants in ZnO (Presentation)$b[electronic resource] /$fSu-Huai Wei, J. Li, and Y. Yan
210   $a[Place of publication not identified] $cWashington, D.C. $cUnited States. Dept. of Energy $cOak Ridge, Tenn. $cdistributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy$d2008
215   $a1 online resource (32 pages) $ccolor illustrations
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300   $aPublished through the Information Bridge: DOE Scientific and Technical Information.
300   $a"May 2008."
300   $aPresented at the 33rd IEEE Photovoltaic Specialist Conference, 11-16 May 2008 in San Diego, California.
300   $aNational Renewable Energy Laboratory (NREL), Golden, CO.
330 3 $aZnO is a promising material for short wave-length opto-electronic devices such as UV lasers and LEDs due to its large exciton binding energy and low material cost. ZnO can be doped easily n-type, but the realization of stable p-type ZnO is rather difficult. Using first-principles band structure methods the authors address what causes the p-type doping difficulty in ZnO and how to overcome the p-type doping difficulty in ZnO.
517   $aDesign of Shallow p-type Dopants in ZnO 
606   $aSemiconductor doping
606   $aDoped semiconductors
606   $aCrystals$xDefects
615  0$aSemiconductor doping.
615  0$aDoped semiconductors.
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701   $aYan$b Yanfa$01418228
712 02$aUnited States.$bDepartment of Energy.
712 02$aNational Renewable Energy Laboratory (U.S.)
712 02$aUnited States.$bDepartment of Energy.$bOffice of Scientific and Technical Information.
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