LEADER 01553nam  2200397I  450 
001 9910698628803321
005 20150929132231.0
035   $a(CKB)5470000002436359
035   $a(OCoLC)922543204
035   $a(EXLCZ)995470000002436359
100   $a20150929j201407    ua             0
101 0 $aeng
135   $aurbn|||||||||
181   $ctxt$2rdacontent
182   $cc$2rdamedia
183   $acr$2rdacarrier
200 12$aA study on reactive ion etching of barium strontium titanate films using mixtures of argon (Ar), carbon tetrafluoride (CF4), and sulfur hexafluoride (SF6) /$fSamuel G. Hirsch [and four others]
210  1$aAberdeen Proving Ground, MD :$cArmy Research Laboratory,$dJuly 2014.
215   $a1 online resource (iv, 7 pages) $cillustrations
225 1 $aARL-TR ;$v6979
300   $aTitle from title screen (viewed Sept. 29, 2015).
300   $a"July 2014."
320   $aIncludes bibliographical references.
517   $aStudy on reactive ion etching of barium strontium titanate films using mixtures of argon 
606   $aSemiconductors$xEtching
606   $aVaractors
615  0$aSemiconductors$xEtching.
615  0$aVaractors.
700   $aHirsch$b Samuel G.$01406675
712 02$aU.S. Army Research Laboratory,
801  0$bGPO
801  1$bGPO
906   $aBOOK
912   $a9910698628803321
996   $aA study on reactive ion etching of barium strontium titanate films using mixtures of argon (Ar), carbon tetrafluoride (CF4), and sulfur hexafluoride (SF6)$93486249
997   $aUNINA